Experimental and numerical investigation of Poole-Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs

2021 ◽  
Author(s):  
Nicolò Zagni ◽  
Marcello Cioni ◽  
Ferdinando Iucolano ◽  
Maurizio Moschetti ◽  
Giovanni Verzellesi ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Room Temperature ◽  
Arrhenius Plot ◽  
Exponential Dependence ◽  
Frenkel Effect ◽  
Simultaneous Decrease ◽  
Gan Hemts ◽  
Dominant Acceptor ◽  
State Stress

Abstract In this paper, we investigate the influence of Poole-Frenkel Effect (PFE) on the dynamic R ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic R ON transients acquired during OFF-state stress (i.e., V GS,STR = 0 V < V T, V DS,STR = 25–125 V and we interpret the results with the aid of numerical simulations. We find that dynamic R ON transients at room temperature accelerate with V DS,STR 1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy (E A) extracted from the Arrhenius plot of the dynamic R ON transients at V DS,STR = 50 V and T = 30–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants (τ) on V DS,STR 1/2 and consequent E A reduction only when including PFE enhancement of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic R ON increase during OFF-state stress.

Study on Fabrication and Characterization of Nanometer Scale MIM Tunneling Junction

2007 ◽  
Author(s):  
Qinggang Liu ◽  
Qing Chen ◽  
Chaoyan Zhang ◽  
Sen Qi ◽  
Botao He ◽  
...  
Keyword(s):  
Room Temperature ◽  
Scanning Speed ◽  
Nanometer Scale ◽  
Exponential Dependence ◽  
Tunneling Junction ◽  
Photoconductive Switch ◽  
Tunneling Mechanism ◽  
Fabrication And Characterization ◽  
Tunneling Junctions

In order to illustrate the effect of the TiOx wires’ characters on the tunneling phenomenon in room temperature and to determine the narrowest TiOx wire as well as its forming conditions which cannot lead to the breakdown of the tunneling junction, the fabrication and tunneling mechanism are analyzed. The TiOx wires with different widths are fabricated by changing the ambient humidity and keeping the scanning speed, oxygen concentration and applied voltage at the same value. The I-V characteristics of tunneling junctions with different width are measured. The results indicate that the narrowest TiOx wire with line width about 16nm can be fabricated between two electrodes of the ultra fast photoconductive switch when the voltage between two electrodes is 6V, which cannot leads to the breakdown of the tunneling junction. It is also found that at room temperature, I-V characteristics of tunneling junctions between two electrodes follows exponential dependence evidently.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

CHARACTERIZATION OF SPLASH-PLATE ATOMIZERS USING NUMERICAL SIMULATIONS

2007 ◽  
Vol 17 (4) ◽  
pp. 347-380 ◽  
Author(s):  
Mohammad P. Fard ◽  
Denise Levesque ◽  
Stuart Morrison ◽  
Nasser Ashgriz ◽  
J. Mostaghimi
Keyword(s):  
Numerical Simulations

scholarly journals Synthesis and characterization of a new ZIF-67@MgAl2O4 nanocomposite and its adsorption behaviour

RSC Advances ◽  
2021 ◽  
Vol 11 (22) ◽  
pp. 13245-13255
Author(s):  
Mehdi Davoodi ◽  
Fatemeh Davar ◽  
Mohammad R. Rezayat ◽  
Mohammad T. Jafari ◽  
Mehdi Bazarganipour ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnesium Aluminate ◽  
Synthesis And Characterization ◽  
Magnesium Aluminate Spinel ◽  
Adsorption Behaviour ◽  
Zeolitic Imidazolate Framework ◽  
Simple Method

New nanocomposite of zeolitic imidazolate framework-67@magnesium aluminate spinel (ZIF-67@MgAl2O4) has been fabricated by a simple method at room temperature with different weight ratios.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

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