Electronic structure, effective masses and g-factors and strain induced crystal field splitting of WZ-InP by k⃗·π⃗ method

2021 ◽  
Vol 96 (12) ◽  
pp. 125827
Author(s):  
Gouri S Tripathi
Keyword(s):  
Electronic Structure ◽  
Crystal Field ◽  
Crystal Field Splitting ◽  
Field Splitting ◽  
Effective Masses ◽  
G Factors

Theory Of 3d Transition Metal Defects In 3C SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Properties ◽  
Crystal Field ◽  
High Spin ◽  
Crystal Field Splitting ◽  
Large Crystal ◽  
Field Splitting ◽  
Vacancy Model ◽  
The Difference

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.

scholarly journals Crystal-Field Splitting and Correlation Effect on the Electronic Structure ofA2IrO3

2013 ◽  
Vol 110 (7) ◽  
Author(s):  
H. Gretarsson ◽  
J. P. Clancy ◽  
X. Liu ◽  
J. P. Hill ◽  
Emil Bozin ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Crystal Field ◽  
Correlation Effect ◽  
Crystal Field Splitting ◽  
Field Splitting
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