Design and linearity analysis of a D-band power amplifier in 0.13 μm SiGe BiCMOS technology

2017 ◽  
Author(s):  
Z. Hu ◽  
G. Sarris ◽  
C. De Martino ◽  
M. Spirito ◽  
E. McCune
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 ◽  
Author(s):  
Roee Ben Yishay ◽  
Roi Carmon ◽  
Oded Katz ◽  
Benny Sheinman ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

2019 ◽  
Author(s):  
Abdul Ali ◽  
Paolo Colantonio ◽  
Franco Giannini ◽  
Dietmar Kissinger ◽  
Herman Jalli Ng ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

A Fully Integrated S-Band Power Amplifier in 0.35um-SiGe BiCMOS Technology

2011 ◽  
Vol 403-408 ◽  
pp. 2481-2484
Author(s):  
Kang Li ◽  
Guo Dong Huang ◽  
Xiao Feng Yang ◽  
Qian Feng ◽  
Chao Xian Zhu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Small Signal ◽  
Two Stage ◽  
Fully Integrated ◽  
Matching Networks ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
On Chip

A fully integrated S-band high efficiency power amplifier using the TSMC 0.35 um SiGe BiCMOS technology is presented. The two-stage power amplifier has been optimized for the whole S-band covering 2 GHz to 4 GHz frequency band for higher 1-dB compression point and efficiency. The input and output matching networks are designed on chip. From the simulate result, the two-stage power amplifier achieves high PAE of 28% and saturation output power of 23.3 dBm at 3 GHz, with the small signal gain of 18.7 dB. Besides, this PA realizes the PAE within the band of 2.4GHz to 4GHz exceed 25%, and the highest PAE of 30.6% at 3.4 GHz.

AKa-Band Power Amplifier with 22.9 dBm Psat, 22.5 dBm OP1dB and 21% PAE in 130 nm SiGe BiCMOS

2019 ◽  
Author(s):  
Qingfeng Zhang ◽  
Chenxi Zhao ◽  
Wen Feng ◽  
Yiming Yu ◽  
Huihua Liu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Sige Bicmos

scholarly journals Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology

2020 ◽  
Author(s):  
Raju Ahamed ◽  
Mikko Varonen ◽  
Dristy Parveg ◽  
Md Najmussadat ◽  
Mikko Kantanen ◽  
...  
Keyword(s):  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Power Detector

Analysis and design of a high-gain 100–180-GHz differential power amplifier in 130 nm SiGe BiCMOS

2017 ◽  
Vol 9 (6) ◽  
pp. 1231-1239
Author(s):  
Faisal Ahmed ◽  
Muhammad Furqan ◽  
Klaus Aufinger ◽  
Andreas Stelzer
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Gain ◽  
Small Signal ◽  
Gain Bandwidth ◽  
Band Frequency ◽  
Analysis And Design ◽  
Differential Gain ◽  
Bicmos Technology ◽  
Sige Bicmos

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDCratio of 5.2 GHz/mW among all D-Band Si-based PAs.

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