A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology

2015 ◽  
Author(s):  
Roee Ben Yishay ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Bicmos Technology ◽  
Sige Bicmos

A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 ◽  
Author(s):  
Roee Ben Yishay ◽  
Roi Carmon ◽  
Oded Katz ◽  
Benny Sheinman ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

Analysis and design of a high-gain 100–180-GHz differential power amplifier in 130 nm SiGe BiCMOS

2017 ◽  
Vol 9 (6) ◽  
pp. 1231-1239
Author(s):  
Faisal Ahmed ◽  
Muhammad Furqan ◽  
Klaus Aufinger ◽  
Andreas Stelzer
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Gain ◽  
Small Signal ◽  
Gain Bandwidth ◽  
Band Frequency ◽  
Analysis And Design ◽  
Differential Gain ◽  
Bicmos Technology ◽  
Sige Bicmos

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDCratio of 5.2 GHz/mW among all D-Band Si-based PAs.

A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

2019 ◽  
Author(s):  
Abdul Ali ◽  
Paolo Colantonio ◽  
Franco Giannini ◽  
Dietmar Kissinger ◽  
Herman Jalli Ng ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology

2021 ◽  
Vol 4 ◽  
pp. 44-47
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Hao Gao ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Bicmos Technology ◽  
Sige Bicmos
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