Surface Smoothing and Roughening Effects of High-K Dielectric Materials Deposited by Atomic Layer Deposition and Their Significance for MIM Capacitors Used in Dram Technology Part II

2020 ◽  
Author(s):  
W.S. Lau
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Surface Smoothing ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric ◽  
Mim Capacitors

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

2011 ◽  
Vol 679-680 ◽  
pp. 441-444 ◽  
Author(s):  
Muhammad Usman ◽  
T. Pilvi ◽  
Markku Leskelä ◽  
Adolf Schöner ◽  
Anders Hallén
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
High K ◽  
Current Voltage ◽  
High K Dielectric

Aluminum-based high-k dielectric materials have been studied for their potential use as passivation for SiC devices. Metal-insulator-semiconductor structures were prepared and their dielectric properties were analyzed using capacitance-voltage and current-voltage measurements. Atomic layer deposition was used for the deposition of dielectric layers consisting of AlN with or without a buffer layer of SiO2, and also a stack of alternating AlN and Al2O3 layers. It has been observed that AlN has a polycrystalline structure which provides leakage paths for the current through the grain boundaries. However, adding alternate amorphous layers of Al2O3 prevent this leakage and give better overall dielectric properties. It is also concluded that the breakdown of the dielectric starts from the degradation of the thin interfacial SiO2 layer.

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

scholarly journals Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

2015 ◽  
Vol 117 (5) ◽  
pp. 054101 ◽  
Author(s):  
Martin D. McDaniel ◽  
Chengqing Hu ◽  
Sirong Lu ◽  
Thong Q. Ngo ◽  
Agham Posadas ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

scholarly journals The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

2012 ◽  
Vol 100 (15) ◽  
pp. 152115 ◽  
Author(s):  
Han Liu ◽  
Kun Xu ◽  
Xujie Zhang ◽  
Peide D. Ye
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

scholarly journals Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

2019 ◽  
Vol 16 (10) ◽  
pp. 671-685 ◽  
Author(s):  
Annelies Delabie ◽  
A. Alian ◽  
Florence Bellenger ◽  
Guy Brammertz ◽  
David P. Brunco ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric
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