High mobility Ge pMOS fabricated using a novel heteroepitaxial ge on Si growth method

2005 ◽  
Author(s):  
A. Nayfeh ◽  
Chi On Chui ◽  
T. Yonehara ◽  
K.C. Saraswa
Keyword(s):  
High Mobility ◽  
Growth Method

Chemical Vapor Growth of Silicon Phosphide Nanostructures

MRS Advances ◽  
2019 ◽  
Vol 5 (31-32) ◽  
pp. 1653-1660
Author(s):  
Zhuoqun Wen ◽  
Yiping Wang ◽  
Zhizhong Chen ◽  
Jian Shi
Keyword(s):  
High Mobility ◽  
Chemical Vapor ◽  
Growth Front ◽  
Group Iv ◽  
Droplet Growth ◽  
Potential Candidate ◽  
Si Substrate ◽  
Vapor Growth ◽  
2D Semiconductors ◽  
Growth Method

ABSTRACTIn the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO2/Si substrate. SiP islands with lateral size up to 20 μm and showing well-defined Raman signals were grown on SiO2/Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.

(Invited) Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method - Novel Platform for High-Mobility Transistors and Photonic Devices -

2013 ◽  
Vol 50 (4) ◽  
pp. 261-266 ◽  
Author(s):  
H. Watanabe ◽  
Y. Suzuki ◽  
S. Ogiwara ◽  
N. Kataoka ◽  
T. Hashimoto ◽  
...  
Keyword(s):  
High Mobility ◽  
Photonic Devices ◽  
High Quality ◽  
Melt Growth ◽  
Growth Method

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

2018 ◽  
Vol 454 ◽  
pp. 68-73 ◽  
Author(s):  
Qingbin Liu ◽  
Cui Yu ◽  
Zezhao He ◽  
Guodong Gu ◽  
Jingjing Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Growth Method ◽  
Chemical Vapor Deposition Graphene

A TEM study of the effect of oxygen on nanocavity formation and precipitation in rapid - solidified Fe-16Ni-9Cr stainless steels

1994 ◽  
Vol 52 ◽  
pp. 700-701
Author(s):  
S. Wisutmethangoon ◽  
T. F. Kelly ◽  
J.E. Flinn
Keyword(s):  
Stainless Steels ◽  
High Mobility ◽  
Hot Extrusion ◽  
Extrusion Ratio ◽  
Gas Atomization ◽  
Cavity Formation ◽  
Nucleation Sites ◽  
Heat Treated ◽  
Different Types ◽  
Effect Of Oxygen

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si
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