An Accurate Subthreshold Analytical Model for Black Phosphorus Heterojunction Dopingless Tunneling Field-Effect Transistors

Mapping Intimacies ◽

10.1109/icee52715.2021.9544143 ◽

2021 ◽

Author(s):

Saeid Marjani ◽

Mohamad Tolue Khayami

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Tunneling Field Effect Transistors

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Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578047 ◽

2016 ◽

Author(s):

Fei Liu ◽

Jian Wang ◽

Hong Guo

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Atomistic Simulations ◽

Tunneling Field Effect Transistors

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Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)

Solid-State Electronics ◽

10.1016/j.sse.2011.05.008 ◽

2011 ◽

Vol 63 (1) ◽

pp. 110-114 ◽

Cited By ~ 64

Author(s):

Min Jin Lee ◽

Woo Young Choi

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Tunneling Field Effect Transistors

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Complementary Black Phosphorus Tunneling Field-Effect Transistors

ACS Nano ◽

10.1021/acsnano.8b06441 ◽

2018 ◽

Vol 13 (1) ◽

pp. 377-385 ◽

Cited By ~ 48

Author(s):

Peng Wu ◽

Tarek Ameen ◽

Huairuo Zhang ◽

Leonid A. Bendersky ◽

Hesameddin Ilatikhameneh ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Tunneling Field Effect Transistors

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A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2208933 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1468-1470 ◽

Cited By ~ 55

Author(s):

Andrew Pan ◽

Chi On Chui

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/34/4/047304 ◽

2017 ◽

Vol 34 (4) ◽

pp. 047304 ◽

Cited By ~ 6

Author(s):

Shi-Li Yan ◽

Zhi-Jian Xie ◽

Jian-Hao Chen ◽

Takashi Taniguchi ◽

Kenji Watanabe

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Energy Bandgap

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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