We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical
Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to
1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity,
carrier concentration and mobility, temperature-dependant Hall effect measurements have been
made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the
mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS.
Additional LTPL measurements show no evidence of additional impurities in the range of
investigation, but suggest that the additional compensation may come from an increased
concentration of non-radiative centers.