Guidelines for reducing NBTI based on its correlation with effective work function studied by CV-BTI on high-k first MOS capacitors with slant-etched SiO2

2014 ◽  
Author(s):  
H. Arimura ◽  
L.-A. Ragnarsson ◽  
T. Schram ◽  
J. Albert ◽  
B. Kaczer ◽  
...  
Keyword(s):  
Work Function ◽  
Mos Capacitors ◽  
Effective Work ◽  
Effective Work Function ◽  
High K

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

2017 ◽  
Vol 72 ◽  
pp. 80-84 ◽  
Author(s):  
Shimpei Yamaguchi ◽  
Zeynel Bayindir ◽  
Xiaoli He ◽  
Suresh Uppal ◽  
Purushothaman Srinivasan ◽  
...  
Keyword(s):  
Work Function ◽  
Control Technique ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 143-150 ◽  
Author(s):  
Naomi Yoshida ◽  
Xianmin Tang ◽  
Khaled Ahmed ◽  
Giuseppina Conti ◽  
Dave Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Gate Dielectric ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Work Function Tuning ◽  
High K Gate Dielectric

Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

2004 ◽  
Author(s):  
Moon Sig Joo ◽  
Byung Jin Cho ◽  
D. Z. Chi ◽  
N. Balasubramanian ◽  
D.-L. Kwong
Keyword(s):  
High Temperature ◽  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
High Temperature Process ◽  
High K
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