Modified Anti-windup Control for High Precision Motion System

Author(s):  
ZhinenG Wu ◽  
Minxia Ding ◽  
Jing Li
2021 ◽  
pp. 2010199
Author(s):  
Jeong Hui Kim ◽  
Kyung Gook Cho ◽  
Dae Hyun Cho ◽  
Kihyon Hong ◽  
Keun Hyung Lee

2019 ◽  
Vol 52 (15) ◽  
pp. 477-482 ◽  
Author(s):  
Francesco Cigarini ◽  
Shingo Ito ◽  
Julian Konig ◽  
Andreas Sinn ◽  
Georg Schitter

1985 ◽  
Vol 51 (4) ◽  
pp. 848-854
Author(s):  
Hisayuki AOYAMA ◽  
Akira SHIMOKOHBE
Keyword(s):  

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.


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