From wave-functions to current-voltage characteristics in silicon single-nanocrystal Coulomb blockade devices

Author(s):  
See ◽  
Dollfus ◽  
Galdin ◽  
Hesto
Author(s):  
Ji-Mei Shen ◽  
Jing Liu

The electronic transport behavior of a sulflower molecule sandwiched between metal leads by S atom connecting apex Au or Ag atoms was investigated using a first-principles study by current-voltage characteristics, transmission spectrum and local density of states. Negative differential resistance (NDR) effect which originates from Coulomb blockade driven by bias was obtained. We also found that the differential conductance can be modulated by the metal leads with different work functions, which promise the potential applications in molecular devices in the future.


1998 ◽  
Vol 12 (24) ◽  
pp. 2513-2540 ◽  
Author(s):  
W. H. Richardson

A theory of Coulomb blockade of tunneling in a degenerate p-n junction is presented. Perturbation theory and temperature Green's functions are used to obtain the current–voltage characteristics. The formulation extends the theory of Coulomb blockade in MIM junctions, to junctions in which the characteristics of the device, is partly determined by the many particle interaction in the electrodes. Exact analytical expressions for the I-V at zero temperature and approximate expressions at nonzero temperatures are obtained. Among the novel features observed are: an asymmetry in the current–voltage characteristics even for voltages on the scale of the Coulomb blockade threshold and threshold like behavior below (e/2C).


1996 ◽  
Vol 104 (18) ◽  
pp. 7296-7305 ◽  
Author(s):  
Vladimiro Mujica ◽  
Mathieu Kemp ◽  
Adrian Roitberg ◽  
Mark Ratner

2003 ◽  
Vol 17 (04n06) ◽  
pp. 608-613 ◽  
Author(s):  
F. BOBBA ◽  
F. GIUBILEO ◽  
M. GOMBOS ◽  
C. NOCE ◽  
A. VECCHIONE ◽  
...  

Topographic and spectroscopic information on GdSr2RuCu2O8 sintered pellets have been obtained by a home built low temperature Scanning Tunneling Microscope (STM) operating at 4.2 K. The topographic image of the surface showed non homogeneous samples with grains of typical size of about 100 nm. In many locations studied, the Tunneling Spectroscopy reveals the presence of charging effects in the current-voltage characteristics over a voltage range up to 100 mV. Two types of charging effects are clearly distinguished: one corresponds to the reduction of the tunneling conductance around zero bias and is attributed to the Coulomb blockade, and another onw, a stepwise increasing of the current as a function of the bias voltage is identified as Coulomb staircase regime. Besides these spurious charging effects, the current-voltage characteristics often show a pronounced non-linearity around 4.0 mV. This non-linearity, disappearing above the critical temperature of the materials, is connected to the superconducting gap in the GdSr 2 RuCu 2 O 8.


2000 ◽  
Vol 280 (1-4) ◽  
pp. 414-415 ◽  
Author(s):  
Peter Agren ◽  
Jan Johansson ◽  
Karin Andersson ◽  
David Haviland

Author(s):  
Н.Д. Жуков ◽  
М.В. Гавриков ◽  
В.Ф. Кабанов ◽  
И.Т. Ягудин

By approximating the tunneling current-voltage characteristics (CVCs) of colloidal quantum dots (QDs) of narrow-gap semiconductors InSb and PbS, it is shown that in the one-electron mode, electron transport is determined by competing processes – emission from a quantum dot, injection into it and transport through it with current limitation by space charge. At voltages above 0.5 V, for single QD on the CVCs, regions of instability and current dip similar to the Coulomb gap were observed. Qualitative and numerical comparative estimates suggest that one-electron transport and current limitation similar to the Coulomb blockade are observed in the structure of a segregated set of quantum dots. Illumination of the sample with white light when measuring the CVCs breaks the Coulomb blockade, greatly increasing or decreasing the current, depending on the spectrum of the exciting light.


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