scholarly journals Analysis of InGaN-delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers

2021 ◽  
pp. 1-1
Author(s):  
Bryan Melanson ◽  
Cheng Liu ◽  
Jing Zhang
Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1123
Author(s):  
Pavel Kirilenko ◽  
Zhe Zhuang ◽  
Daisuke Iida ◽  
Martin Velazquez-Rizo ◽  
Kazuhiro Ohkawa

We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak also exhibits a blue-shift with increasing currents as does the main emission peak. Using high-resolution microscopy, we observed many point-like emission spots in the EL emission images at the currents below 1 mA. However, these emission spots cannot be identified at currents above 5 mA because the red emission from quantum wells (QWs) is much stronger than that emitted by these spots. Finally, we demonstrate that these emission spots are related to the defects generated in red QWs. The measured In content was lower at the vicinity of the defects, which was regarded as the reason for separated short-wavelength emission in red InGaN LEDs.


ACS Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 587-594 ◽  
Author(s):  
Zhuofei He ◽  
Yang Liu ◽  
Zhaoliang Yang ◽  
Jing Li ◽  
Jieyuan Cui ◽  
...  

2020 ◽  
Vol 19 (11) ◽  
pp. 1224-1229 ◽  
Author(s):  
Alim Abdurahman ◽  
Timothy J. H. Hele ◽  
Qinying Gu ◽  
Jiangbin Zhang ◽  
Qiming Peng ◽  
...  

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  

2011 ◽  
Vol 40 (4) ◽  
pp. 417-419 ◽  
Author(s):  
Qing Li ◽  
Jiuyan Li ◽  
Lijun Deng ◽  
Qian Wang ◽  
Zhanxian Gao ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 4707-4715 ◽  
Author(s):  
Qiwei Zhang ◽  
Haiqin Sun ◽  
Tao Kuang ◽  
Ruiguang Xing ◽  
Xihong Hao

Materials emitting red light (∼611 nm) under excitation with blue light (440–470 nm) are highly desired for fabricating high-performance white light-emitting diodes (LEDs).


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