Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

Xiaoyu Zhao; Bin Tang; Liyan Gong; Junchun Bai; Jiafeng Ping; Shengjun Zhou

doi:10.1063/5.0043240

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

Applied Physics Letters ◽

10.1063/5.0043240 ◽

2021 ◽

Vol 118 (18) ◽

pp. 182102

Author(s):

Xiaoyu Zhao ◽

Bin Tang ◽

Liyan Gong ◽

Junchun Bai ◽

Jiafeng Ping ◽

...

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Yellow Light ◽

Light Emitting ◽

Rational Construction ◽

Ingan Quantum Wells

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Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

2010 IEEE Photinic Society's 23rd Annual Meeting ◽

10.1109/photonics.2010.5698996 ◽

2010 ◽

Author(s):

Hongping Zhao ◽

Jing Zhang ◽

Takahiro Toma ◽

Guangyu Liu ◽

Jonathan D. Poplawsky ◽

...

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Light Emitting ◽

Ingan Quantum Wells

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Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Applied Physics Letters ◽

10.1063/1.5002104 ◽

2017 ◽

Vol 111 (11) ◽

pp. 113501 ◽

Cited By ~ 37

Author(s):

Christina M. Jones ◽

Chu-Hsiang Teng ◽

Qimin Yan ◽

Pei-Cheng Ku ◽

Emmanouil Kioupakis

Keyword(s):

Numerical Simulations ◽

Quantum Wells ◽

Light Emitting Diodes ◽

Carrier Localization ◽

Light Emitting ◽

Ingan Quantum Wells

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Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/jstqe.2009.2016576 ◽

2009 ◽

Vol 15 (4) ◽

pp. 1104-1114 ◽

Cited By ~ 110

Author(s):

Hongping Zhao ◽

R.A. Arif ◽

N. Tansu

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Design Analysis ◽

Light Emitting ◽

Ingan Quantum Wells

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Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

10.1117/12.875002 ◽

2011 ◽

Author(s):

Hongping Zhao ◽

Jing Zhang ◽

Guangyu Liu ◽

Takahiro Toma ◽

Jonathan D. Poplawsky ◽

...

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Light Emitting ◽

Ingan Quantum Wells

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Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

10.1117/12.875901 ◽

2011 ◽

Cited By ~ 2

Author(s):

Nelson Tansu ◽

Hongping Zhao ◽

Jing Zhang ◽

Guangyu Liu ◽

Xiao-Hang Li ◽

...

Keyword(s):

Quantum Wells ◽

High Efficiency ◽

Light Emitting Diodes ◽

Device Physics ◽

Light Emitting ◽

Novel Approaches ◽

Ingan Quantum Wells

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Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded-Temperature Profile

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference ◽

10.1364/cleo.2009.cmoo4 ◽

2009 ◽

Author(s):

Hongping Zhao ◽

Guangyu Liu ◽

Xiaohang Li ◽

G. S. Huang ◽

S. Tafon Penn ◽

...

Keyword(s):

Quantum Wells ◽

Temperature Profile ◽

Light Emitting Diodes ◽

Light Emitting ◽

Ingan Quantum Wells

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Modeling and simulation of efficiency droop in GaN-based blue light-emitting diodes incorporating the effect of reduced active volume of InGaN quantum wells

Current Applied Physics ◽

10.1016/j.cap.2017.06.014 ◽

2017 ◽

Vol 17 (10) ◽

pp. 1298-1302 ◽

Cited By ~ 9

Author(s):

Han-Youl Ryu ◽

Guen-Hwan Ryu ◽

Young-Hwan Choi ◽

Byungjin Ma

Keyword(s):

Modeling And Simulation ◽

Quantum Wells ◽

Blue Light ◽

Light Emitting Diodes ◽

Efficiency Droop ◽

Active Volume ◽

Light Emitting ◽

Ingan Quantum Wells

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Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO 2 /polystyrene microlens arrays

10.1117/12.763973 ◽

2008 ◽

Cited By ~ 2

Author(s):

Yik-Khoon Ee ◽

Pisist Kumnorkaew ◽

Hua Tong ◽

Ronald A. Arif ◽

James F. Gilchrist ◽

...

Keyword(s):

Numerical Modeling ◽

Quantum Wells ◽

Light Emitting Diodes ◽

Microlens Arrays ◽

Light Emitting ◽

Modeling And Experiments ◽

Ingan Quantum Wells

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Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Journal of Applied Physics ◽

10.1063/1.3668117 ◽

2011 ◽

Vol 110 (11) ◽

pp. 113110 ◽

Cited By ~ 138

Author(s):

Jing Zhang ◽

Nelson Tansu

Keyword(s):

Quantum Wells ◽

Spontaneous Emission ◽

Light Emitting Diodes ◽

Emission Rates ◽

Light Emitting ◽

Ingan Quantum Wells

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Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays

Applied Physics Letters ◽

10.1063/1.2816891 ◽

2007 ◽

Vol 91 (22) ◽

pp. 221107 ◽

Cited By ~ 121

Author(s):

Yik-Khoon Ee ◽

Ronald A. Arif ◽

Nelson Tansu ◽

Pisist Kumnorkaew ◽

James F. Gilchrist

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Microlens Arrays ◽

Light Emitting ◽

Ingan Quantum Wells

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