2D Solid-State Nanopore Field-Effect Transistors: Comprehensive Computational Methodology for Biosensing Applications

2020 ◽  
Vol 14 (6) ◽  
pp. 42-51
Author(s):  
Nagendra Athreya ◽  
Aditya Sarathya ◽  
Mingye Xiong ◽  
Jean-Pierre Leburton
Keyword(s):  
Solid State ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Methodology

Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors

2018 ◽  
Vol 10 (49) ◽  
pp. 43166-43176 ◽  
Author(s):  
Ke Xu ◽  
Md Mahbubul Islam ◽  
David Guzman ◽  
Alan C. Seabaugh ◽  
Alejandro Strachan ◽  
...  
Keyword(s):  
Solid State ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Layer Formation ◽  
Pulse Dynamics

SiC Solid-State Disconnect for High Power System Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Christopher Dries ◽  
Jian Hui Zhao
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Power Systems ◽  
Insertion Loss ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Low Insertion Loss ◽  
A Current

This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

scholarly journals Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tingting Wei ◽  
Teruo Kanki ◽  
Masashi Chikanari ◽  
Takafumi Uemura ◽  
Tsuyoshi Sekitani ◽  
...  
Keyword(s):  
Solid State ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Transport Modulation

Iron-coordinating π-conjugated semiconducting polymer: morphology and charge transport in organic field-effect transistors

2020 ◽  
Vol 8 (24) ◽  
pp. 8213-8223 ◽  
Author(s):  
P. Blake J. St. Onge ◽  
Tzu-Chien Chen ◽  
Adam Langlois ◽  
Aneeta Younus ◽  
I Jo Hai ◽  
...  
Keyword(s):  
Solid State ◽  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Coordination ◽  
Organic Field Effect Transistors ◽  
Semiconducting Polymer ◽  
New Approach ◽  
Polymer Morphology

A new approach to improve charge transport and solid-state morphology in a semiconducting polymer was developed through metal coordination without disruption of the π-conjugation.

Dirac-cone induced gating enhancement in single-molecule field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (27) ◽  
pp. 13117-13125 ◽  
Author(s):  
Hantao Sun ◽  
Xunshan Liu ◽  
Yanjie Su ◽  
Bing Deng ◽  
Hailin Peng ◽  
...  
Keyword(s):  
Solid State ◽  
Single Molecule ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dirac Cone ◽  
Electrostatic Gating ◽  
Bottom Gate

Dirac-cone induced electrostatic gating enhancement in single-molecule FETs with graphene electrodes and a solid-state local bottom gate.

On the Working Mechanisms of Solid-State Double-Layer-Dielectric-Based Organic Field-Effect Transistors and Their Implication for Sensors

2017 ◽  
Vol 4 (1) ◽  
pp. 1700326 ◽  
Author(s):  
Raphael Pfattner ◽  
Amir M. Foudeh ◽  
Celine Liong ◽  
Lance Bettinson ◽  
Allison C. Hinckley ◽  
...  
Keyword(s):  
Solid State ◽  
Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Working Mechanisms

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors

2010 ◽  
Vol 21 (43) ◽  
pp. 435202 ◽  
Author(s):  
K E Moselund ◽  
H Ghoneim ◽  
H Schmid ◽  
M T Björk ◽  
E Lörtscher ◽  
...  
Keyword(s):  
Solid State ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solid State Diffusion ◽  
State Diffusion
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