Boron doped hydrogenated nanocrystalline silicon thin films prepared by layer-by-layer technique and its application in n-i-p flexible amorphous silicon thin film solar cells

2009 ◽  
Author(s):  
Ke Tao ◽  
Dexian Zhang ◽  
Yun Sun ◽  
Linshen Wang ◽  
Jingfang Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nanocrystalline Silicon ◽  
Thin Film Solar Cells ◽  
Layer By Layer ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Layer Technique ◽  
Layer By Layer Technique

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

2006 ◽  
Vol 127 (2-3) ◽  
pp. 251-254 ◽  
Author(s):  
Chun-Yu Lin ◽  
Yean-Kuen Fang ◽  
Shih-Fang Chen ◽  
Ping-Chang Lin ◽  
Chun-Sheng Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Nanocrystalline Silicon ◽  
Layer By Layer ◽  
Silicon Thin Film ◽  
Layer Technique ◽  
Layer By Layer Technique

Boron-Doped Nanocrystalline Silicon Thin Films Prepared by PECVD

2012 ◽  
Vol 503 ◽  
pp. 386-390
Author(s):  
Xiu Qin Wang ◽  
Jian Ning Ding ◽  
Ning Yi Yuan ◽  
Shu Bo Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Volume Fraction ◽  
Chemical Vapour ◽  
Nanocrystalline Silicon ◽  
Process Conditions ◽  
Rf Power ◽  
Silicon Thin Films ◽  
Boron Doped

Boron-doped nanocrystalline silicon thin films(p-nc-Si:H) were deposited on glass substrates by plasma enhanced chemical vapour deposition (PECVD) using SiH4/ H2/ B2H6. The effects of substrate temperature, rf power and diborane flow on the microstructure, the electrical properties of nanocrystalline silicon thin films have been investigated. The results show that, increasing substrate temperature, rf power and B2H6flow can improve the conductivity of P-Si thin film. However, exceeding one value, they are not advantageous to improve the conductivity due to the decrystallization of films. Hence, appropriate process conditions are crucial for the preparation of high quality p layer. crystalline volume fraction (Xc) 26.2 %, mean grain size (d) 3.5nm and conductivity 0.374S/cm, p-nc-Si:H thin film was deposited.

scholarly journals Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

1999 ◽  
Vol 86 (12) ◽  
pp. 7079-7082 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
R. Brenot ◽  
P. Bulkin ◽  
R. Vanderhaghen ◽  
B. Drévillon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Layer Technique ◽  
Layer By Layer Technique

Layer-by-Layer Assembled Transparent Conductive Graphene Films for Silicon Thin-Film Solar Cells

2012 ◽  
Vol 51 ◽  
pp. 11PF01 ◽  
Author(s):  
Ryousuke Ishikawa ◽  
Masashi Bando ◽  
Hidetoshi Wada ◽  
Yasuyoshi Kurokawa ◽  
Adarsh Sandhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Layer By Layer ◽  
Silicon Thin Film ◽  
Graphene Films
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