Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs

2016 ◽  
Author(s):  
Daiji Yamashita ◽  
Kentaroh Watanabe ◽  
Masahisa Fujino ◽  
Takuya Hoshii ◽  
Yoshitaka Okada ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Spectroscopy Analysis ◽  
Interfacial Defect ◽  
Defect Levels

Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures

1999 ◽  
Vol 85 (2) ◽  
pp. 985-993 ◽  
Author(s):  
D. V. Singh ◽  
K. Rim ◽  
T. O. Mitchell ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Admittance Spectroscopy ◽  
Spectroscopy Analysis ◽  
Band Offsets

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

Investigation of relation between Ga concentration and defect levels of Al/Cu(In,Ga)Se2 Schottky junctions using admittance spectroscopy

2007 ◽  
Vol 515 (15) ◽  
pp. 6208-6211 ◽  
Author(s):  
T. Sakurai ◽  
N. Ishida ◽  
S. Ishizuka ◽  
K. Matsubara ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Defect Levels ◽  
Schottky Junctions

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1994 ◽  
Vol 339 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
Type Conduction

ABSTRACTOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.

The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 647-650
Author(s):  
Won Woo Lee ◽  
Mary Ellen Zvanut
Keyword(s):  
Thermal Relaxation ◽  
Admittance Spectroscopy ◽  
Defect Level ◽  
Defect Complexes ◽  
Donor And Acceptor ◽  
Defect Levels

The purpose of this study is to determine the vanadium defect levels in semi-insulating 4H-SiC and 6H-SiC using optical admittance spectroscopy (OAS). OAS data show several distinct peaks for the vanadium-doped SI 4H-SiC and 6H-SiC. Comparison of the data for the two polytypes suggests that peaks at 0.67 ± 0.02 eV and 0.70 ± 0.02 eV in 6H substrates and 0.75 ± 0.02 eV in 4H substrates are related to V3+/4+ levels at the cubic sites. A peak at 0.87 ± 0.02 eV in the 6H sample is assigned to the same defect level at the hexagonal site and the associated transition in 4H was observed at 0.94 ± 0.02 eV in our spectra. The donor levels are thought to be related to peaks at 1.94 ± 0.05 eV and 1.87 ± 0.05 eV in 4H and 6H samples, respectively. The differences between the values obtained from the optical admittance measurements and those reported in the literature are attributed to thermal relaxation and/or contributions from defect complexes.

scholarly journals Investigation of Defect Levels in Mg-Doped GaN Schottky Structures by Thermal Admittance Spectroscopy

2001 ◽  
Vol 228 (2) ◽  
pp. 385-389
Author(s):  
N.D. Nguyen ◽  
M. Germain ◽  
M. Schmeits ◽  
B. Schineller ◽  
M. Heuken
Keyword(s):  
Admittance Spectroscopy ◽  
Defect Levels ◽  
Mg Doped

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1993 ◽  
Vol 325 ◽  
Author(s):  
A.O. Evwaraye ◽  
S.R. Smith ◽  
W.C. Mitchel
Keyword(s):  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
First Time ◽  
Type Conduction

AbstractOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. For the first time, this technique is applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, kl, k2). giving rise to n-type conduction. Deep defect levels attributible to transition metal impurities have been identified in 6H-SiC:N by optical admittance spectroscopy.

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