scholarly journals Closed-form analytical drain current model considering energy transport and self-heating for short-channel fully-depleted SOi NMOS devices with lightly-doped drain structure biased in strong inversion

2002 ◽  
Vol 49 (12) ◽  
pp. 2193-2203 ◽  
Author(s):  
Shih-Chia Lin ◽  
J.B. Kuo
Keyword(s):  
Closed Form ◽  
Energy Transport ◽  
Current Model ◽  
Drain Current ◽  
Short Channel ◽  
Fully Depleted ◽  
Self Heating ◽  
Strong Inversion ◽  
Lightly Doped Drain

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET

2015 ◽  
Vol 103 ◽  
pp. 154-161 ◽  
Author(s):  
Mohammad K. Anvarifard ◽  
Ali A. Orouji
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Fully Depleted ◽  
Soi Mosfet

A new drain current model for short-channel MOSFETs

2003 ◽  
Vol 43 (2) ◽  
pp. 333-338 ◽  
Author(s):  
Sadegh Abbasian ◽  
Ebrahim Farjah
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Short Channel
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