Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

2017 ◽  
Vol 64 (9) ◽  
pp. 3654-3660 ◽  
Author(s):  
Hongyu He ◽  
Yuan Liu ◽  
Binghui Yan ◽  
Xinnan Lin ◽  
Xueren Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Trap States ◽  
Different Temperatures ◽  
Amorphous Ingazno

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

Drain current model for thin-film transistors with interface trap states

2010 ◽  
Vol 107 (3) ◽  
pp. 034502 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Interface Trap ◽  
Trap States
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