Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current

2020 ◽  
Vol 67 (5) ◽  
pp. 1931-1938
Author(s):  
Xingyu Jia ◽  
Sung-Wen Huang Chen ◽  
Yajin Liu ◽  
Xu Hou ◽  
Yonghui Zhang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes ◽  
Design Strategies ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Low-leakage-current high-breakdown-voltage InSb p+n diodes

1990 ◽  
Author(s):  
Tai Ping Sun ◽  
Si-Chen Lee ◽  
Kou-Chen Liu ◽  
Sheng-Jehn Yang
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

2014 ◽  
Vol 7 (4) ◽  
pp. 041003 ◽  
Author(s):  
Joseph J. Freedsman ◽  
Takashi Egawa ◽  
Yuya Yamaoka ◽  
Yoshiki Yano ◽  
Akinori Ubukata ◽  
...  
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current

Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current

2004 ◽  
Author(s):  
Seung-Chul Lee ◽  
Jin-Cherl Her ◽  
Min-Woo Ha ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

2005 ◽  
Vol 2 (7) ◽  
pp. 2647-2650 ◽  
Author(s):  
Masahiko Kuraguchi ◽  
Yoshiharu Takada ◽  
Wataru Saito ◽  
Ichiro Omura ◽  
Kunio Tsuda
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current
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