Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

scholarly journals p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

2021 ◽  
Vol 119 (26) ◽  
pp. 263508
Author(s):  
Luca Nela ◽  
Catherine Erine ◽  
Elison Matioli
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Low Leakage ◽  
Low Leakage Current

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

2018 ◽  
Vol 113 (20) ◽  
pp. 202101 ◽  
Author(s):  
Wenshen Li ◽  
Zongyang Hu ◽  
Kazuki Nomoto ◽  
Zexuan Zhang ◽  
Jui-Yuan Hsu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Low Leakage ◽  
Low Leakage Current

Defect Related Leakage Current Components in SiC Schottky Barrier Diode

2012 ◽  
Vol 725 ◽  
pp. 53-56 ◽  
Author(s):  
Kenichi Ohtsuka ◽  
T. Nakatani ◽  
A. Nagae ◽  
H. Watanabe ◽  
Y. Nakaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Device Simulation ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Current Component ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Drift Layer ◽  
Lower Voltage

SiC Schottky barrier diodes were fabricated and measured properties were characterized by device simulation. Most of devices show low leakage current, however, a few devices show leakage current larger than the values estimated from deviation of drift layer parameters. The leakage current component remarkable in lower voltage and saturating at higher voltage is related to Schottky barrier tunneling at macroscopic defects. The component remarkable in higher voltage is considered to be due to microscopic defect related generation current, concerning with non-stoichiometry.

Low leakage current Schottky barrier diode

2005 ◽  
Author(s):  
H. Kozaka ◽  
M. Takata ◽  
S. Murakami ◽  
T. Yatsuo
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Low Leakage Current

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs

1997 ◽  
Vol 471 ◽  
Author(s):  
Byung-Hyuk Min ◽  
Jerzy Kanicki
Keyword(s):  
Leakage Current ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Current Ratio ◽  
Low Leakage ◽  
Kink Effect ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Output Characteristics

ABSTRACTA new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

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