Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors

2013 ◽  
Author(s):  
Chen-Ming Lee ◽  
Bing-Yue Tsui
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
Si Nanowire ◽  
Nano Scale

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

scholarly journals Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Xianzhe Liu ◽  
Hua Xu ◽  
Honglong Ning ◽  
Kuankuan Lu ◽  
Hongke Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Amorphous Silicon ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Nano Scale

Polymer mask-weakening grain-boundary effect: towards high-performance organic thin-film transistors with mobility closing to 20 cm2 V−1 s−1

2020 ◽  
Vol 4 (10) ◽  
pp. 2990-2994
Author(s):  
Deyang Ji ◽  
Jie Li ◽  
Xiaosong Chen ◽  
Lin Li ◽  
Liqiang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
High Performance ◽  
Boundary Effect ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Top Contact ◽  
Grain Boundary Effect

Polystyrene-based masks are fabricated to produce top-contact high-resolution (5 μm) electrodes. With this mask, the mobility of DPA-based thin-film transistors could reach 19.22 cm2 V−1 s−1, which is a new breakthrough for DPA thin-film transistors.

Direct observation of grain boundary effects in polycrystalline silicon thin‐film transistors

1982 ◽  
Vol 40 (7) ◽  
pp. 598-600 ◽  
Author(s):  
H. J. Leamy ◽  
R. C. Frye ◽  
K. K. Ng ◽  
G. K. Celler ◽  
E. I. Povilonis ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Direct Observation ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Boundary Effects ◽  
Silicon Thin Film ◽  
Grain Boundary Effects

Noise Sources in Polycrystalline Silicon Thin-Film Transistors

2002 ◽  
Vol 744 ◽  
Author(s):  
Il Ki Han ◽  
Young Ju Park ◽  
Woon Jo Cho ◽  
Won Jun Choi ◽  
Jungil Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Barrier Height ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Sources ◽  
New Device

ABSTRACTSources for low frequency noise in polycrystalline silicon thin-film transistors are analytically investigated. The grain boundary is modeled as symmetric Schottky barrier and a new device equation for current conduction in thin-film transistors is presented. At lower currents where barrier height is large enough to provide necessary distribution of time constants for 1/f noise, the number fluctuation via barrier height modulation at the grain boundary is found to be the main noise generation mechanism. At higher currents, mobility and diffusivity fluctuation are found to be dominant

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