Numerical modelling of non-planar GaN LED with CNT top contact

In this paper, the theoretical study of LED based on GaN NWs with carbon nanotubes (CNT) top contact has been presented. The main electrical and optical characteristics of LED have been numerically calculated. In a 0.5 x 0.5 mm NWs array, the Ohmic losses in CNTs were 2.7% with an operating current density of 50 A/cm2. It proves the possibility of using CNTs as transparent contact.

Design and fabrication of a semi-transparent solar cell considering the effect of the layer thickness of MoO3/Ag/MoO3 transparent top contact on optical and electrical properties

We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO3/Ag/MoO3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO3/Ag/MoO3 ST-OSC by integrating MoO3/Ag/MoO3 (10/$$d_{m}$$ d m /$$d_{{od}}$$ d od nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO3/Ag (–/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of $$d_{m}$$ d m values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for $$d_{m} ~$$ d m = 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing $$d_{m}$$ d m up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for $$d_{m} = 6$$ d m = 6 nm as 63.30 mA/cm2 and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC.

Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

In this article, characterization of fully patterned zinc-tin oxide (ZTO)-based memristive devices with feature sizes as small as 25 µm2 is presented. The devices are patterned via lift-off with a platinum bottom contact and a gold-titanium top contact. An on/off ratio of more than two orders of magnitude is obtained without the need for electroforming processes. Set operation is a current controlled process, whereas the reset is voltage dependent. The temperature dependency of the electrical characteristics reveals a bulk-dominated conduction mechanism for high resistance states. However, the charge transport at low resistance state is consistent with Schottky emission. Synaptic properties such as potentiation and depression cycles, with progressive increases and decreases in the conductance value under 50 successive pulses, are shown. This validates the potential use of ZTO memristive devices for a sustainable and energy-efficient brain-inspired deep neural network computation.

Stability Assessment of p-i-n Perovskite Photovoltaic Mini-Modules Utilizing Different Top Metal Electrodes

Long-term stability is one of the major challenges for p-i-n type perovskite solar modules (PSMs). Here, we demonstrate the fabrication of fully laser-patterned series interconnected p-i-n perovskite mini-modules, in which either single Cu or Ag layers are compared with Cu/Au metal-bilayer top electrodes. According to the scanning electron microscopy measurements, we found that Cu or Ag top electrodes often exhibit flaking of the metal upon P3 (top contact removal) laser patterning. For Cu/Au bilayer top electrodes, metal flaking may cause intermittent short-circuits between interconnected sub-cells during operation, resulting in fluctuations in the maximum power point (MPP). Here, we demonstrate Cu/Au metal-bilayer-based PSMs with an efficiency of 18.9% on an active area of 2.2 cm2 under continuous 1-sun illumination. This work highlights the importance of optimizing the top-contact composition to tackle the operational stability of mini-modules, and could help to improve the feasibility of large-area module deployment for the commercialization of perovskite photovoltaics.

Two-step direct heteroarylation reaction towards 2,5-bis(alkoxy)benzene polymer for organic field-effect transistors processed with tetrahydrofuran

A 2,5-bis(alkoxy)benzene polymer POB-TNT has been newly designed and synthesized via very convenient two-step direct heteroarylation reaction. Its physicochemical properties have been investigated. POB-TNT demonstrates typical [Formula: see text]-type carrier transport characteristic in unencapsulated bottom-gate and top-contact organic field-effect transistors (OFETs) processed with relatively green tetrahydrofuran solvent. The results highlight a readily accessible and low-cost-oriented polymer semiconductor for non-halogenated solvent-processed OFET application.

Aza-substitution on naphthalene diimide-based conjugated polymers for n-type bottom gate/top contact polymer transistors under ambient conditions

Four conjugated polymers based on naphthalene diimide (NDI) as the acceptor and thiophene–phenyl–thiophene with different aza-substitutions as co-units were synthesized.