Module-Level TIM Degradation in HALT

2021 ◽  
Author(s):  
Joshua Tompkins ◽  
David Huitink

Abstract In this study, TIM degradation is driven through HALT using temperature cycling and random vibration for two commercially available materials providing thermal conductivities of 6.5 and 8.0 W/m-K. HALT specimen were prepared by applying TIM through a 4-mil stencil over AlSiC baseplates in the shape of those used in Wolfspeed CAS325M12HM2 power electronics modules. Baseplates were mounted onto aluminum carrier blocks with embedded thermocouples to characterize the thermal resistance across the baseplate and TIM layer. Thermal dissipation into the top of the baseplates was provided by a custom heating block, which mimics the size and placement of the die junctions in CAS325 modules, applying power loads of 200, 300, and 400W. After initial characterization, samples were transferred to the HALT chamber with one set of samples exposed to temperature cycling only (TCO) and the other temperature cycling and vibration (TCV). Both sample sets were cycled between temperature extremes of −40 and 180 °C with random vibrations applied at a peak acceleration of 3.21 Grms. After hundreds of cycles, samples were reevaluated to assess changes in thermal resistance to provide an accelerated measure of TIM degradation. This will allow for reliability calculations of useful lifetime, provide a basis for developing accelerated testing method to related temperature cycling to faster methods of degradation, and additionally provide a means by which to develop a maintenance schedule for servicing the power modules which will enhance cooling and lifetime operation.

Author(s):  
Frank Fan Wang

It is a challenge to correlate different dynamic loads. Often, attempts are made to compare the peak acceleration of sine wave to the root mean square (RMS) acceleration of random vibration and shock. However, peak sine acceleration is the maximum acceleration at one frequency. Random RMS is the square root of the area under a spectral density curve. These are not equivalent. This paper is to discuss a mathematical method to compare different kinds of dynamic damage at the resonant point of the related electronic equipment. The electronic equipment will vibrate at its resonance point when there are dynamic excitations. The alternative excitation at the resonant frequency causes the most damage. This paper uses this theory to develop a method to correlate different dynamic load conditions for electronic equipment. The theory is that if one kind of dynamic load causes the same levels of damaging effects as the other, the levels of vibration can then be related.


2021 ◽  
Author(s):  
Hayden Carlton ◽  
John Harris ◽  
Alexis Krone ◽  
David Huitink ◽  
Md Maksudul Hossain ◽  
...  

Abstract The need for high power density electrical converters/inverters dominates the power electronics realm, and wide bandgap semiconducting materials, such as gallium nitride (GaN), provide the enhanced material properties necessary to drive at higher switching speeds than traditional silicon. However, lateral GaN devices introduce packaging difficulties, especially when attempting a double-sided cooled solution. Herein, we describe optimization efforts for a 650V/30A, GaN half-bridge power module with an integrated gate driver and double-sided cooling capability. Two direct bonded copper (DBC) substrates provided the primary means of heat removal from the module. In addition to the novel topology, the team performed electrical/thermal co-design to increase the multi-functionality of module. Since a central PCB comprised the main power loop, the size and geometry of the vias and copper traces was analyzed to determine optimal functionality in terms of parasitic inductance and thermal spreading. Thermally, thicker copper layers and additional vias introduced into the PCB also helped reduce hot spots within the module. Upon fabrication of the module, it underwent electrical characterization to determine switching performance, as well as thermal characterization to experimentally measure the total module’s thermal resistance. The team successfully operated the module at 400 V, 30 A with a power loop parasitic inductance of 0.89 nH; experimental thermal measurements also indicated the module thermal resistance to be 0.43 C/W. The overall utility of the design improved commensurately by introducing simple, yet effective electrical/thermal co-design strategies, which can be applied to future power modules.


2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001918-001947 ◽  
Author(s):  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann

Packages and modules with embedded semiconductor dies are of interest for various application fields and power classes. First packages in the lower power range are available in volume production since almost six years. Recent developments focus on medium and higher power applications raging over 500W into the kW range. Different approaches are available to realize such packages and modules. This paper will give an overview and detailed description of the latest approaches for such embedded die structures. In common of all of these approaches, is the use of laminate based die embedding, which uses standard PCB manufacturing technologies. Main differences are the used base substrate, which can still be a ceramic (DBC), Cu leadframe or high current substrate. Examples for the different methods will be given. As the main part, this paper will describe concepts, which enable significant smaller form-factor of power electronics modules, thereby allowing for lower price, high reliability, capability of direct mounting on e.g. a motor so as to form one unit with the motor housing, wide switching frequency range (for large application field) and high power efficiency. The innovative character of this packaging concept is the idea to embed the power drive components (IGBTs, MOSFETs, diode) as thinned chips into epoxy-resin layer built-up and to realize large-area interconnections on both sides by direct copper plating the dies to form a conductor structure with lowest possible electrical impedance and to achieve an optimum heat removal. In this way a thin core is formed on a large panel format which is called Embedded Power Core. The paper will specifically highlight the first results on manufacturing an embedded power discrete package as an example of an embedded power core containing a thin rectifier diode. For module realization, the power cores are interconnected to insulated metal substrates (IMS) by the use of Ag sintering interconnection technologies for the final manufacturing of Power modules. The paper will elaborate on the sintering process for Power Core/IMS interconnections, the microscopically features of the sintered interfaces, and the lateral filling of the sintering gap with epoxy prepregs. Firstly, 500W power modules were manufactured using this approach. Reliability testing results, solder reflow testing, temperature cycling test and active power cycling, will be discussed in detail.


Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 745
Author(s):  
Dongjin Kim ◽  
Yasuyuki Yamamoto ◽  
Shijo Nagao ◽  
Naoki Wakasugi ◽  
Chuantong Chen ◽  
...  

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.


1987 ◽  
Vol 12 (4) ◽  
pp. 239-250 ◽  
Author(s):  
R. A. Tatara

A general thermal model to calculate the thermal resistance of a power module having rectangular die and layers has been constructed. The model incorporates a finite element computer program to solve for three-dimensional heat conduction. Effects of voids in the solder regions are included. A sample case is analyzed, and a comparison is made to a recent study.


2014 ◽  
Vol 136 (1) ◽  
Author(s):  
Rui Zhang ◽  
Jian Cai ◽  
Qian Wang ◽  
Jingwei Li ◽  
Yang Hu ◽  
...  

To promote heat dissipation in power electronics, we investigated the thermal conduction performance of Sn-Bi solder paste between two Cu plates. We measured the thermal resistance of Sn-Bi solder paste used as thermal interface material (TIM) by laser flash technique, and a thermal resistance less than 5 mm2 K/W was achieved for the Sn-Bi TIM. The Sn-Bi solder also showed a good reliability in terms of thermal resistance after thermal cycling, indicating that it can be a promising candidate for the TIM used for power electronics applications. In addition, we estimated the contact thermal resistance at the interface between the Sn-Bi solder and the Cu plate with the assistance of scanning acoustic microscopy. The experimental data showed that Sn-Bi solder paste could be a promising adhesive material used to attach power modules especially with a large size on the heat sink.


1990 ◽  
Vol 7 (2) ◽  
pp. 29-33 ◽  
Author(s):  
W. Martin ◽  
B. Waibel ◽  
W. Laaser

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