SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

2008 ◽  
Vol 26 (2) ◽  
pp. 487 ◽  
Author(s):  
L. F. Voss ◽  
K. Ip ◽  
S. J. Pearton ◽  
R. J. Shul ◽  
M. E. Overberg ◽  
...  
Keyword(s):  
Band Gap ◽  
Integrated Circuit ◽  
Electron Mobility ◽  
Wide Band ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
Wide Band Gap ◽  
High Electron Mobility

Band gap bowing parameter in pseudomorphic AlxGa1−xN/GaN high electron mobility transistor structures

2015 ◽  
Vol 117 (22) ◽  
pp. 225702 ◽  
Author(s):  
Anshu Goyal ◽  
Ashok K. Kapoor ◽  
R. Raman ◽  
Sandeep Dalal ◽  
Premila Mohan ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Bowing Parameter

scholarly journals An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1599 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano
Keyword(s):  
Power Electronics ◽  
Electron Mobility ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Special Focus ◽  
High Electron ◽  
High Electron Mobility ◽  
Advantages And Disadvantages ◽  
Electron Mobility Transistors

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

ScGaN and ScAlN: emerging nitride materials

2014 ◽  
Vol 2 (17) ◽  
pp. 6042-6050 ◽  
Author(s):  
M. A. Moram ◽  
S. Zhang
Keyword(s):  
Band Gap ◽  
Optoelectronic Devices ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Wide Band Gap ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Wide Band Gap Semiconductors ◽  
Energy Harvesting Devices

ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2468-2472 ◽  
Author(s):  
Munenari Kawashima ◽  
Hitoshi Hayashi ◽  
Hiroyuki Fukuyama ◽  
Hiroshi Okazaki ◽  
Hideaki Matsuzaki ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Microwave Integrated Circuit ◽  
High Electron Mobility ◽  
Monolithic Microwave Integrated Circuit

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
Sign in / Sign up

Export Citation Format

Share Document