Electrical characterization of InGaAs ultra-shallow junctions

2010 ◽  
Vol 28 (1) ◽  
pp. C1C41-C1C47 ◽  
Author(s):  
Dirch H. Petersen ◽  
Ole Hansen ◽  
Peter Bøggild ◽  
Rong Lin ◽  
Peter F. Nielsen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Electrical Characterization of Ultra-Shallow Junctions Formed by Diffusion From a CoSi2 Diffusion Source

1996 ◽  
Vol 427 ◽  
Author(s):  
F. La Via ◽  
E. Rimini
Keyword(s):  
Electrical Characterization ◽  
Junction Depth ◽  
Thermal Budget ◽  
Shallow Junctions ◽  
Different Temperatures ◽  
Diffusion Source ◽  
Ultra Shallow Junctions ◽  
20 Nm ◽  
Low Thermal Budget

AbstractUltra-Shallow p+/n and n+/p junctions were fabricated using a Silicide-As-Diffusion-Source (SADS) process and a low thermal budget (800÷900 °C). A thin layer (50 nm) of CoSi2 was implanted with As and BF2 and subsequently diffused at different temperatures and times to form two Ultra-Shallow junctions with a junction depth of 14 and 20 nm. These diodes were extensively investigated by I-V and C-V measurements in the range of temperature between 80 and 500 K. TEM delineation was used to controll the junction uniformity.

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

2013 ◽  
Vol 2 (5) ◽  
pp. P195-P204 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Masashi Okutani ◽  
Gota Murai ◽  
Shuji Tagawa ◽  
Hiroki Saikusa ◽  
...  
Keyword(s):  
Shallow Junctions ◽  
Ultra Shallow Junctions

Optical characterization of laser processed ultra-shallow junctions

2003 ◽  
Vol 208-209 ◽  
pp. 277-284 ◽  
Author(s):  
G. Kerrien ◽  
M. Hernandez ◽  
C. Laviron ◽  
T. Sarnet ◽  
D. Débarre ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs

2007 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Makiko Oshida ◽  
Makoto Miyamura ◽  
Motofumi Saitoh ◽  
Akira Mineji ◽  
...  
Keyword(s):  
Electron Holography ◽  
Gate Length ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions
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