Effect of carrier transport on wavelength chirp in quantum well semiconductor lasers

1994 ◽  
Author(s):  
Radhakrishnan Nagarajan ◽  
John E. Bowers
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Carrier Transport

HIGH SPEED SEMICONDUCTOR LASERS

1994 ◽  
Vol 05 (01) ◽  
pp. 1-44 ◽  
Author(s):  
RADHAKRISHNAN NAGARAJAN ◽  
DANIEL TAUBER ◽  
JOHN E. BOWERS
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Dynamic Characteristics ◽  
Frequency Modulation ◽  
High Speed ◽  
Carrier Transport ◽  
Modulation Frequency ◽  
Signal Transmission ◽  
Photon Density ◽  
Intensity Noise

The strategy and methods to design high speed semiconductor lasers are reviewed here. The formalism for the analysis of intensity modulation, frequency modulation and intensity noise in quantum well lasers is first derived. Using this formalism the process of optimizing the laser structure for high speed operation is presented. In addition to the conventional factors such as the differential gain, photon density, photon lifetime and device parasitics, we also review the critical effects of carrier transport and microwave signal transmission on the dynamic characteristics and design of high speed semiconductor lasers.

Optical modal gain in multiple quantum-well semiconductor lasers based on InP

2006 ◽  
Vol 84 (1) ◽  
pp. 53-66 ◽  
Author(s):  
M S Wartak ◽  
P Weetman ◽  
T Alajoki ◽  
J Aikio ◽  
V Heikkinen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Electrostatic Effects ◽  
Modal Gain

An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor lasers based on InP in terms of the current at electrodes is presented. The link between the current at the electrodes and the density of carriers inside each quantum well was provided by rate equations with the inclusion of carrier transport effects. Description of hole dispersion is based on a 4 × 4 Luttinger–Kohn Hamiltonian and was done with the electrostatic effects of the carrier charges. Electrostatic effects were included via a self-consistent solution of electron and hole wave equations and the Poisson equation. The optical gain for the TE (transverse electric) mode has been determined with the inclusion of non-Markovian effects, Coulombic enhancement, and band-gap renormalization. The theoretical approach was compared with experimental measurements of the optical gain on a laser structure consisting of four quantum wells using the Hakki–Paoli method. The important role played by the leakage current was revealed when the results were compared. PACS No.: 73.63.Hs, 78.20.Bh, 78.20.Ci

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Anomalous dispersion, differential gain, and dispersion of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers

2000 ◽  
Vol 34 (10) ◽  
pp. 1207-1213 ◽  
Author(s):  
A. P. Bogatov ◽  
A. E. Boltaseva ◽  
A. E. Drakin ◽  
M. A. Belkin ◽  
V. P. Konyaev
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Anomalous Dispersion ◽  
Differential Gain ◽  
Strained Quantum Well

Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells

2014 ◽  
Vol 4 (6) ◽  
pp. 1518-1525 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Naofumi Kasamatsu ◽  
Hiromasa Fujii ◽  
Tomoyuki Kada ◽  
Shigeo Asahi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Time Of Flight ◽  
Multiple Quantum ◽  
Direct Evaluation ◽  
Flight Measurement

Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

1997 ◽  
Vol 3 (2) ◽  
pp. 315-319 ◽  
Author(s):  
N. Tessler ◽  
S. Marcinkevicius ◽  
U. Olin ◽  
C.K.V. Silfvenius ◽  
B.F. Stalnacke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

scholarly journals Modeling of cross‐well carrier transport in a multiple quantum well modulator

1991 ◽  
Vol 59 (23) ◽  
pp. 3009-3011 ◽  
Author(s):  
D. C. Hutchings ◽  
C. B. Park ◽  
A. Miller
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Multiple Quantum
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