The object of research is the broadband balanced SHF mixer (BM) based on resonant-tunneling diodes (RTDs). The research goals are to perform the statistical analysis of BMs design parameters technological errors impact on its electrical characteristics scatter, and to analyze the kinetics of these characteristics under the destabilizing factors influence. The ranging of BMs design parameters technological errors impacts on its electrical characteristics scatter revealed that the biggest impact is made by the technological errors of the BMs non-linear elements I-V characteristics. The BMs reliability study revealed that to ensure the studied BMs reliability during operation under high temperatures impact the design and technological optimization of the BMs electrical characteristics is required.
ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.
Analysis of the probabilistic characteristics of the electrical parameters of a broadband balanced mixer of microwave radio signals based on resonant tunneling diodes and an assessment of its reliability