STUDY OF SUPERCONDUCTING Y-BA-CU-O THIN FILMS WITH ZERO RESISTANCE TEMPERATURE AT 77K

1987 ◽  
Vol 01 (02) ◽  
pp. 571-574
Author(s):  
Jia-qi Zheng ◽  
Guo-guang Zheng ◽  
Dong-qi Li ◽  
Wei Wang ◽  
Jin-min Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electron Beam ◽  
High Vacuum ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

Y-Ba-Cu-O thin films are deposited onto severval kinds of substrates by electron beam evaporating in a high vacuum system. After the heat treatment at 850–890°c for 1hr the Y-Ba-Cu-O films on the BaF2 substrates show superconducting behaviors with the midpoint Tc around 87K and zero resistance temperature at 77K. The composition and stucture analysis of these films have been studied by AES, XRFS and x-ray diffraction.

SUPERCONDUCTING Bi-Sr-Ca-Cu-O THIN FILMS PREPARED BY THE PULSED-LASER EVAPORATION

1988 ◽  
Vol 02 (08) ◽  
pp. 999-1003
Author(s):  
F.M. ZHANG ◽  
Y.C. ZHANG ◽  
S.J. GU ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Nd:Yag Laser ◽  
Pulse Width ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

We report here the preparation of the superconducting Bi-Sr-Ca-Cu-O thin films on SrTiO 3(100) substrates by a Nd:YAG laser, which provides laser pulses with wavelength of 1.06µm and pulse width of 200ns. After the heat treatment at 850°C for half an hour in oxygen flow, the samples exhibit superconductivity with the zero resistance at 66.8K and the onset temperature around 84K. X-ray diffraction analyses show that the samples have the preferred orientation with the c-axis perpendicular to the substrate.

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffraction Study ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

EPITAXIALLY GROWN YBCO THIN FILMS ON LOW LOSS LaAlO3 SUBSTRATE

1990 ◽  
Vol 04 (05) ◽  
pp. 369-373 ◽  
Author(s):  
Y. Z. ZHANG ◽  
L. LI ◽  
Y. Y. ZHAO ◽  
B. R. ZHAO ◽  
Y. G. WANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Low Loss ◽  
X Ray ◽  
Ybco Thin Films ◽  
Zero Resistance ◽  
Scanning Electron

A planar dc magnetron sputtering device was used to prepare high T c and high J c YBCO thin films. Both single crystal and polycrystal thin films were successfully grown on (100) oriented LaAlO 3 substrates. Zero resistance temperature T c0 = 92.3 K and critical current density J c (0) = 3.82 × 106 A/cm 2 at 77 K was obtained. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

YBa2Cu3O7−x THIN FILMS GROWN ON SAPPHIRE WITH EPITAXIAL YTTRIA-STABILIZED ZrO2 BUFFER LAYER

1993 ◽  
Vol 07 (27) ◽  
pp. 1741-1746
Author(s):  
S.F. XU ◽  
Y.J. TIAN ◽  
H.B. LÜ ◽  
Y.L. ZHOU ◽  
Z.H. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Depth Profile ◽  
Ybco Film ◽  
Ybco Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auger Depth Profile ◽  
Zero Resistance ◽  
Influence Of Substrate

We have successfully fabricated high-quality YBa 2 Cu 3 O 7−x (YBCO) thin films grown on sapphire with epitaxial Yttria-Stabilized ZrO 2 (YSZ) buffer layer by pulsed laser deposition. X-ray diffraction and Auger depth profile were used to characterize these thin films. The values of zero-resistance temperature Tco and critical current density J c (at 77 K) of c-axis oriented YBCO thin film with 500 Å-YSZ buffer layer were 91 K and 2.2×106 A/cm 2, respectively. The Auger depth profile showed that no obvious diffusion occurred between the buffer layer and the YBCO film. The influence of substrate temperature and thickness of buffer layer has been investigated.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

1993 ◽  
Vol 07 (01) ◽  
pp. 19-23 ◽  
Author(s):  
W. A. LUO ◽  
Y. Q. TANG ◽  
Y. Z. CHEN ◽  
I. N. CHAN ◽  
K. Y. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Critical Current Density ◽  
Current Density ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Quality ◽  
Step Process ◽  
X Ray ◽  
Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

SYNTHESIS AND CHARACTERIZATION OF HG-BASED SUPERCONDUCTING THIN FILMS PRODUCED STARTING FROM LASER-DEPOSITED PRECURSORS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2731-2736 ◽  
Author(s):  
M. BINDI ◽  
F. FUSO ◽  
N. PUCCINI ◽  
E. ARIMONDO ◽  
A. TAMPIERI ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
Precursor Film ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Microscopy Analysis ◽  
Zero Resistance ◽  
Microscopy Analysis

Correctly c-axis oriented HgBa 2 CaCu 2 O 6+δ thin films have been produced on (100) MgO single crystal substrates and characterized. Pulsed laser deposition has been exploited to deposit Hg-free Re-doped precursor which then underwent synthesis in evacuated and sealed quartz tubes. X-ray diffraction pattern of the precursor target shows the expected composition of oxides. Scanning electron microscopy analysis have been performed on the surface of the precursor film. Hg-1212 films have been analyzed by θ-2θ Bragg-Brentano X-ray diffractometry. The patterns show little contributions in composition of Hg-1223 phase. The films exhibit a transition temperature >120 K with zero-resistance at around 115 K.

Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 845-848 ◽  
Author(s):  
Alexia Drevin-Bazin ◽  
Jean François Barbot ◽  
Thierry Cabioc’h ◽  
Marie France Beaufort
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Max Phase ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Transmission Electron

In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C.

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