Deposition of ZnS thin films by electron beam evaporation technique, effect of thickness on the crystallographic and optical properties

2019 ◽  
Vol 33 (04) ◽  
pp. 1950034 ◽  
Author(s):  
Bassam Abdallah ◽  
Koutayba Alnama ◽  
Fareza Nasrallah

Deposition of Zinc sulfide (ZnS) thin films on Si (100) and glass substrates has been performed using electron beam evaporation (EBE) method without annealing. Film structure has been analyzed by XRD, while SEM and AFM have been used to explore the films morphology. Raman spectroscopy has been used to confirm film composition. The stoichiometry has been verified by EDX and XPS techniques. XRD patterns indicated that the films possess a polycrystalline cubic structure with orientations along (111) and (220) planes. The crystallinity has been better with film thickness in the 350–1700 nm range while the RMS roughness increases. Optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy band gap of the films shows a clear reduction from 3.45 eV to 3.36 eV with increasing film thickness. The evolution of refractive index, extinction coefficient, and dielectric constants with thickness has been investigated from transmittance spectra in the 500–1000 nm wavelength range.

2019 ◽  
Vol 33 (29) ◽  
pp. 1950348 ◽  
Author(s):  
B. Abdallah ◽  
M. D. Zidan ◽  
A. Allahham

Deposition of zinc sulfide (ZnS) thin films on Si (1 0 0) and glass substrates has been performed using RF magnetron sputtering method. Film structure has been analyzed by X-ray Diffraction (XRD), while the scanning electron microscope (SEM) images have been used to explore the film morphology. FTIR and Raman spectroscopies have been used to confirm the film composition. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) technique. The XRD patterns have indicated that the films possess a polycrystalline nanocrystallite cubic structure. The optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy bandgaps of the films show an increase from 3.75 eV to 3.88 eV with the power source changes from 90 W to 125 W. Furthermore, Z-scan technique (CW diode laser [Formula: see text] nm) was employed to estimate the nonlinear optical absorption of the prepared ZnS films.


2008 ◽  
Vol 55-57 ◽  
pp. 373-376
Author(s):  
Artorn Pokaipisit ◽  
M. Horprathum ◽  
Pichet Limsuwan

The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 oC. At 350 oC, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 W-cm was obtained at a temperature of 350 oC.


2020 ◽  
pp. 2050044
Author(s):  
SAHAR MORADI ◽  
HASSAN SEDGHI

Nanostructured Fe:SnO2 thin films were deposited on glass substrates through sol–gel spin coating method. Films were synthesized with different iron quantities including 0%, 4%, 8% and 12% (wt.%). The effects of Fe concentration on optical properties of films were investigated by spectroscopic ellipsometry (SE) technique. SE measured ([Formula: see text]) parameters for films in the wavelength range between 300[Formula: see text]nm to 800[Formula: see text]nm. Optical properties including the refractive index, extinction coefficient, transmittance, dielectric constants and optical conductivity were determined by fitting the SE measured ([Formula: see text]) parameters and data obtained from the optical model-based analysis. Results showed that the transmittance values increase by increment of Fe concentration from 0% to 12%. The bandgap energy ([Formula: see text] of prepared thin films was also calculated. [Formula: see text] values were between 3.44 and 3.58[Formula: see text]eV. Dispersion parameters including the high frequency dielectric constant ([Formula: see text] and the ratio of free carrier concentration to effective mass (N/m[Formula: see text] were then obtained for the prepared films.


Optik ◽  
2015 ◽  
Vol 126 (19) ◽  
pp. 2163-2166 ◽  
Author(s):  
Avula. Edukondalu ◽  
B. Kavitha ◽  
Syed Rahman ◽  
Ajay Gupta ◽  
K. Siva Kumar

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