ELECTRICAL TRANSPORT PROPERTIES OF SOME METALLIC GLASSES

1993 ◽  
Vol 07 (20) ◽  
pp. 1295-1299 ◽  
Author(s):  
P. VENUGOPAL REDDY ◽  
S. SHEKHAR ◽  
Y. PURUSHOTHAM

Electrical resistivity and thermoelectric power of glassy ribbons having compositions Fe 81 B 13.5 Si 3.5 C 2, Fe 67 Co 18 B 14 Si 1, Fe 39 Ni 39 Mo 4 Si 6 B 12, and Co 53 Ni 25 Fe 5 Si 11 B 6 have been studied over a temperature range of 300–750 K. The electrical transport properties of these materials are found to increase with increasing temperature, and their temperature variation has been explained on the basis of Ziman's theory.

1996 ◽  
Vol 8 (10) ◽  
pp. 2505-2509 ◽  
Author(s):  
V. Zima ◽  
M. Vlček ◽  
L. Beneš ◽  
M. Casciola ◽  
L. Massinelli ◽  
...  

2013 ◽  
Vol 743-744 ◽  
pp. 59-64
Author(s):  
Liang Wei Fu ◽  
Jun You Yang ◽  
Ye Xiao ◽  
Jiang Ying Peng ◽  
Ming Yang Zhang

AgSbTe2compounds have been synthesized via melting and subsequent cooling processes. The effect of cooling process, from air-cooling, water quenching to liquid nitrogen-quenching, on the microstructure and the electrical transport properties of AgSbTe2has been investigated by means of powder X-ray diffraction, electron microscope, electrical resistivity, and Hall coefficient measurements. It has been found that the cooling process has apparent influence on the microstructure and corresponding electrical properties. The phase components and morphology changed as the cooling process altered. The electrical resistivity and the Seebeck coefficient of the as-prepared samples increased from air-cooled to liquid nitrogen-quenched sample.


1993 ◽  
Vol 07 (18) ◽  
pp. 1173-1192 ◽  
Author(s):  
HIRONORI OGATA ◽  
YUSEI MARUYAMA ◽  
TAMOTSU INABE ◽  
YOHJI ACHIBA ◽  
SINZO SUZUKI ◽  
...  

Electronic structures of various kinds of alkali metal (Na, K, Rb or Cs)-doped C 60 solids are studied by electrical resistivity and thermoelectric power measurements by using C 60 single crystals prepared from a CS 2 solution as a starting material. For K-or Rb-doped C 60, metallic conducting behaviors in the normal conducting state and relatively sharp superconducting transitions are observed by the electrical resistivity measurements. Nearly linear-temperature dependences with the negative sign are observed in the thermoelectric power measurements at the normal conducting states for K-or Rb-doped C 60. From electron diffusion term of the thermoelectric power, the values of Fermi energy and the density of states at the Fermi energy are estimated by assuming the three-dimensional free electron model, which are in substantial agreement with the results of other experiments and calculations. "Metal–semiconductor transition" is observed in both the electrical resistivity and the thermoelectric power measurements for Na-doped C 60. Existence of metallic phase is confirmed by the thermoelectric power measurement in Cs-doped C 60.


1990 ◽  
Vol 83 (1-3) ◽  
pp. 354-356 ◽  
Author(s):  
Girish Chandra ◽  
S. Radha ◽  
A.K. Nigam ◽  
Shiva Prasad ◽  
S.N. Shringi ◽  
...  

2001 ◽  
Vol 16 (3) ◽  
pp. 774-777 ◽  
Author(s):  
Yong-Chae Chung ◽  
Han-Ill Yoo

Electrical transport properties, electrical conductivity, and thermoelectric power of a single-crystalline Mn0.45Zn0.43Fe2.12O4 were measured as functions of temperature in the range of 25 to 1000 °C. According to the small polaron hopping model, the values of the activation energy for small polaron hopping (EH) were obtained from the conductivity data in three different temperature regions: 0.032 eV for T < TC, 0.12 eV for TC < T < 600 °C, and 0.25 eV for 600 °C < T < 1000 °C. The behavior of conductivity and thermoelectric power data above TC is discussed in connection with cation redistribution.


2018 ◽  
Vol 19 (4) ◽  
pp. 316-321
Author(s):  
I. Romaniv ◽  
B. Kuzhel ◽  
L. Romaka ◽  
V. Pavlyuk

Electrical transport properties of the R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd3Cu4Ge4 structure type (space group Immm) were studied in the temperature interval 11 – 300 K. Measurements of the temperature dependencies of electrical resistivity (r(T)) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r(T) dependencies for Gd3Ag4Sn4, Tb3Ag4Sn4 and Dy3Ag4Sn4 compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho3Ag4Sn4 compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R3Ag4Sn4 compounds was analyzed.


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