scholarly journals Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds

2018 ◽  
Vol 19 (4) ◽  
pp. 316-321
Author(s):  
I. Romaniv ◽  
B. Kuzhel ◽  
L. Romaka ◽  
V. Pavlyuk
Keyword(s):  
Electrical Resistivity ◽  
Transport Properties ◽  
Temperature Interval ◽  
Electrical Transport ◽  
Magnetic Ordering ◽  
Structure Type ◽  
Electrical Transport Properties ◽  
Interval Relation ◽  
Slope Change ◽  
Magnetic And Electric Properties

Electrical transport properties of the R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd3Cu4Ge4 structure type (space group Immm) were studied in the temperature interval 11 – 300 K. Measurements of the temperature dependencies of electrical resistivity (r(T)) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r(T) dependencies for Gd3Ag4Sn4, Tb3Ag4Sn4 and Dy3Ag4Sn4 compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho3Ag4Sn4 compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R3Ag4Sn4 compounds was analyzed.

The Effect of Cooling Process on the Microstructure and Electrical Transport Properties of AgSbTe2 Compound

2013 ◽  
Vol 743-744 ◽  
pp. 59-64
Author(s):  
Liang Wei Fu ◽  
Jun You Yang ◽  
Ye Xiao ◽  
Jiang Ying Peng ◽  
Ming Yang Zhang
Keyword(s):  
Electrical Resistivity ◽  
Transport Properties ◽  
Liquid Nitrogen ◽  
Electrical Transport ◽  
Cooling Water ◽  
Air Cooling ◽  
X Ray Diffraction ◽  
Cooling Process ◽  
Electrical Transport Properties ◽  
Apparent Influence

AgSbTe2compounds have been synthesized via melting and subsequent cooling processes. The effect of cooling process, from air-cooling, water quenching to liquid nitrogen-quenching, on the microstructure and the electrical transport properties of AgSbTe2has been investigated by means of powder X-ray diffraction, electron microscope, electrical resistivity, and Hall coefficient measurements. It has been found that the cooling process has apparent influence on the microstructure and corresponding electrical properties. The phase components and morphology changed as the cooling process altered. The electrical resistivity and the Seebeck coefficient of the as-prepared samples increased from air-cooled to liquid nitrogen-quenched sample.

scholarly journals Synthesis, Magnetization, and Electrical Transport Properties of Mn3Zn0.9Cu0.1N

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Y. Yin ◽  
J. C. Han ◽  
T. P. Ying ◽  
J. K. Jian ◽  
Z. H. Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Thermal Hysteresis ◽  
Magnetic Transition ◽  
Electrical Transport Properties ◽  
Metallic Behavior ◽  
Absolute Value ◽  
First Order ◽  
Slope Change ◽  
The Magnetic Field

We synthesized Mn3Zn0.9Cu0.1N by solid state reaction, and magnetic as well as electrical transport properties were investigated. It is found that Mn3Zn0.9Cu0.1N exhibits a first-order antiferromagnetism (AFM) to paramagnetic (PM) transition with the Néel temperatureTN~163 K, and substitution of Cu for Zn would favor ferromagnetism (FM) state and weaken AFM ground state, leading to a convex curvature character ofM(T)curve. With high external fields 10 kOe–50 kOe, magnetic transition remains a robust AFM-PM feature while FM phase is completely suppressed. Thermal hysteresis ofM(T)under 500 Oe is also suppressed when the magnetic field exceeds 10 kOe. Mn3Zn0.9Cu0.1N exhibits a good metallic behavior except for a slope change aroundTN, which is closely related to AFM-PM magnetic transition. Compared with the first differential of resistivity with respect to temperature for(dρ/dT)Mn3ZnNin transition temperature range, the absolute value of(dρ/dT)Mn3Zn0.9Cu0.1Nis much lower which is close to zero.

Correlation of Microstructures with Electrical Transport Properties in Mn Doped Co Nanoferrite Particles

2012 ◽  
Vol 510-511 ◽  
pp. 487-492
Author(s):  
M. Akram ◽  
M. Anis-ur-Rehman ◽  
S. Nasir ◽  
G. Asghar
Keyword(s):  
Electrical Resistivity ◽  
Transport Properties ◽  
Cation Distribution ◽  
Electrical Transport ◽  
Research Work ◽  
Precipitation Method ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Dc Electrical Resistivity ◽  
X Ray

Magnetic nanocomposites are offering a variety of novel features and tune able properties, mainly depending on particle size, cation distribution, morphology and porosity of the prepared materials. The aim of this research work is to understand the effects of Mn doping on the microstructures and hence consequences on the electrical transport properties with shift of cation distribution in CoFe2O4. Co1-xMnxFe2O4nanocrystallite particles with stoichiometric proportion (x) varying from 0.0 to 1.0 were prepared by co-precipitation method. X-ray diffraction patterns confirmed the FCC spinel structure of synthesized particles. The crystal structure is found to be inverse cubic spinel with a space group Fd3m and the lattice constants ranges from 8.36 Å to 8.46 Å The crystallite sizes were calculated from the most intense peak (311) using the Debye-Scherrer formula for all the samples those were synthesized at reaction temperature of 70°C. Then samples were sintered at 600°C for 3 hours, characterized by X-ray diffraction at room temperature and DC electrical resistivity measurements were done as a function of temperature by two-probe method from 370 K to 690 K. The measurements showed that DC electrical resistivity decreased with increase in temperature ensuring the semiconductor nature of the material in this temperature range. DC electrical resistivity results were discussed in terms of polaron hopping model under the effects of cation distribution. AC electrical properties were also analyzed. All the observed properties were correlated with observed microstructures.

ELECTRICAL TRANSPORT PROPERTIES OF SOME METALLIC GLASSES

1993 ◽  
Vol 07 (20) ◽  
pp. 1295-1299 ◽  
Author(s):  
P. VENUGOPAL REDDY ◽  
S. SHEKHAR ◽  
Y. PURUSHOTHAM
Keyword(s):  
Electrical Resistivity ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Metallic Glasses ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Increasing Temperature

Electrical resistivity and thermoelectric power of glassy ribbons having compositions Fe 81 B 13.5 Si 3.5 C 2, Fe 67 Co 18 B 14 Si 1, Fe 39 Ni 39 Mo 4 Si 6 B 12, and Co 53 Ni 25 Fe 5 Si 11 B 6 have been studied over a temperature range of 300–750 K. The electrical transport properties of these materials are found to increase with increasing temperature, and their temperature variation has been explained on the basis of Ziman's theory.

Investigation of electrical transport properties of Bi0.5Sb1.5Te2.7Se0.3 alloys prepared by high-pressure method

2015 ◽  
Vol 08 (05) ◽  
pp. 1550055 ◽  
Author(s):  
Xin Guo ◽  
Xiaopeng Jia ◽  
Yuewen Zhang ◽  
Hairui Sun ◽  
Bing Sun ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electrical Transport ◽  
Room Temperature ◽  
Synthesis Process ◽  
Electrical Transport Properties ◽  
Pressure Method ◽  
Measurement Results

The quaternary Bi 0.5 Sb 1.5 Te 2.7 Se 0.3 alloys have been successfully synthesized within 25 min by high-pressure method. The pressure-dependent electrical transport properties of the as-prepared Bi 0.5 Sb 1.5 Te 2.7 Se 0.3 alloys are carefully investigated at room temperature. The measurement results indicate that the electrical resistivity and the Seebeck coefficient reveal a strong correlation with the increase of synthesis pressure. The carrier concentration and mobility are modulated effectively due to the effects of synthesis pressure and composition, leading to an improvement in the power factor of Bi 0.5 Sb 1.5 Te 2.7 Se 0.3. These results suggest that the utilization of pressure during the synthesis process provides an effective and controllable strategy to optimize the electrical transport properties of the ( Bi , Sb )2( Te , Se )3 alloys.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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