Submicrometer Shadow Mask Fabricated by Anisotropic Wet Etching and Focused Ion Beam Techniques for Nanofabrication in UHV

1998 ◽  
Vol 12 (14n15) ◽  
pp. 597-605 ◽  
Author(s):  
Hanyu Sheng ◽  
Daisuke Fujita ◽  
Taizo Ohgi ◽  
Hiroshi Okamoto ◽  
Hitoshi Nejoh
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Wet Etching ◽  
Ultra High Vacuum ◽  
New Method ◽  
Shadow Mask ◽  
Pattern Size

We have developed a new method for fabricating a silicon submicrometer shadow mask for nanofabrication in ultra-high vacuum. Combining KOH anisotropic wet etching, electron beam lithography, reactive ion etching and focused ion beam techniques, a pattern size of 2.5×2.5 mm2 and opaque part about 1 μm can be obtained.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

scholarly journals Direct comparison of domain wall behavior in permalloy nanowires patterned by electron beam lithography and focused ion beam milling

2011 ◽  
Vol 110 (8) ◽  
pp. 083904 ◽  
Author(s):  
M. A. Basith ◽  
S. McVitie ◽  
D. McGrouther ◽  
J. N. Chapman ◽  
J. M. R. Weaver
Keyword(s):  
Electron Beam ◽  
Domain Wall ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Focused Ion Beam Milling

Fabrication of coaxial plasmonic crystals by focused ion beam milling and electron-beam lithography

2013 ◽  
Vol 100 ◽  
pp. 192-194 ◽  
Author(s):  
Xiaoxiao Jiang ◽  
Qiongchan Gu ◽  
Fengwen Wang ◽  
Jiangtao Lv ◽  
Zhenhe Ma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Plasmonic Crystals ◽  
Focused Ion Beam Milling

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE

2015 ◽  
Vol 821-823 ◽  
pp. 965-969
Author(s):  
Fernando Lloret ◽  
D. Araujo ◽  
M.P. Villar ◽  
L. Liu ◽  
Konstantinos Zekentes
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Si Nanowires ◽  
Transmission Electron ◽  
Set Up

Si nanowires (NWs) samples have been converted to silicon carbide (SiC) NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular beam epitaxy (MBE) set-up. Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED) have been in-situ carried out to control the growth process. Scanning electron microscopy (SEM) and conventional transmission electron microscopy (CTEM) have been used to characterize the resulting nanostructures. In addition, the samples have been prepared by focused ion beam (FIB) in order to have electron-transparently lamellas for TEM with the interface nanowire-substrate. SiC/Si shell/core NWs free of planar defects have been obtained for conversion tmpratures lower than 800oC.

Patterning of permalloy thin films by means of electron-beam lithography and focused ion-beam milling

2008 ◽  
Vol 44 (4-5) ◽  
pp. 699-704 ◽  
Author(s):  
S. Getlawi ◽  
M.R. Koblischka ◽  
U. Hartmann ◽  
C. Richter ◽  
T. Sulzbach
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Permalloy Thin Films ◽  
Focused Ion Beam Milling

Focused Ion Beam Nanofabrication: A Comparison with Conventional Processing Techniques

2006 ◽  
Vol 6 (3) ◽  
pp. 661-668 ◽  
Author(s):  
R. M. Langford
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Feature Size ◽  
Diverse Range ◽  
Minimum Feature Size ◽  
Nano Science ◽  
Processing Techniques

Focused ion beam and dual platform systems are versatile tools for nanoengineering and nano-science applications. These systems complement conventional processing methods and can be used to prototype and modify a diverse range of nano-devices and sensors. This article discusses FIB nanofabrication and compares it with other fabrication techniques such as electron beam lithography and reactive ion etching. Aspects such as the minimum feature size and side wall profiles are discussed and compared. In addition, the limitations and detrimental effects of FIB processes are discussed.

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