Wide Tuning Range Varactorless Tunable Active Inductor-Based Voltage Controlled Oscillator for Wireless Applications

2019 ◽  
Vol 28 (14) ◽  
pp. 1950242
Author(s):  
Omar Faruqe ◽  
Md Tawfiq Amin
Keyword(s):  
Tuning Range ◽  
Active Inductor ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Performance Parameters ◽  
Wide Tuning Range ◽  
Silicon Area ◽  
Wireless Applications ◽  
Dc Power ◽  
Tuning Frequency

This paper presents a varactorless tunable active inductor-based voltage controlled oscillator (VCO) in 90[Formula: see text]nm CMOS process. The proposed VCO yields a wide tuning range of 116% with an output frequency of 1.19–4.46[Formula: see text]GHz for the tuning voltage of 0.3–1.5[Formula: see text]V. It consumes a low dc power ranging from 2.44[Formula: see text]mW to 4.79[Formula: see text]mW for the specified tuning range. The variation of phase noise ranges from [Formula: see text][Formula: see text]dBc/Hz to [Formula: see text][Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset with the change of tuning voltage as well as tuning frequency. The proposed varactorless VCO has a maximum Figure of Merit (FOM) of [Formula: see text][Formula: see text]dBc/Hz with a differential output power of 1.8[Formula: see text]dBm at tuning voltage of 0.7[Formula: see text]V. The elimination of varactor which abates the silicon area consumption and the minimization of the variation of performance parameters are the special outcomes of the proposed active inductor-based VCO. Comparing the performance parameters such as power consumption, FOM and tuning range, the proposed design outperforms most of the cited designs.

Ground-Adjustable Inductor for Wide-Tuning VCO Design

2012 ◽  
Vol 256-259 ◽  
pp. 2373-2378
Author(s):  
Wu Shiung Feng ◽  
Chin I Yeh ◽  
Ho Hsin Li ◽  
Cheng Ming Tsao
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Supply Voltage ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Wide Tuning Range ◽  
Chip Area ◽  
Ground Plate

A wide-tuning range voltage-controlled oscillator (VCO) with adjustable ground-plate inductor for ultra-wide band (UWB) application is presented in this paper. The VCO was implemented by standard 90nm CMOS process at 1.2V supply voltage and power consumption of 6mW. The tuning range from 13.3 GHz to 15.6 GHz with phase noise between -99.98 and -115dBc/Hz@1MHz is obtained. The output power is around -8.7 to -9.6dBm and chip area of 0.77x0.62mm2.

scholarly journals A Very Low-phase-noise CMOS Ring VCO Intended for Sensor Interfaces

2021 ◽  
Author(s):  
Mahin Esmaeilzadeh ◽  
Yves Audet ◽  
Mohamed Ali ◽  
Mohamad Sawan
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Silicon Area ◽  
Wide Range ◽  
Extended Frequency ◽  
Sensor Interfaces ◽  
Low Phase Noise ◽  
Analytical Expressions

<p>We describe in the paper a ring voltage-controlled oscillator (VCO) indicating an improved phase noise over a wide range of frequency offsets and an extended frequency/voltage tuning range. The phase noise is improved by leveraging a better linearity approach, while reducing the VCO gain and maintaining wide tuning range. The proposed VCO is a block of a time-domain comparator embedded in a monitoring and readout circuit of an industrial sensor interface. An analytical model is extracted resulting in closed-form expressions for both input-referred noise and phase noise of the VCO. Employing the analytical expressions, the contributed noise and phase noise limitations are fully addressed, and all the effective factors are investigated. The prototype of the proposed VCO was implemented and fabricated in a 0.35 µm CMOS process. The integrated VCO consumes 0.903 mW from a 3.3 V supply, when running at its maximum frequency of 9.37 MHz. The measured phase noise of the proposed VCO is -147.57 dBc/Hz at 1 MHz offset from the 9.37 MHz oscillation frequency, and the occupied silicon area of circuit is 0.005 mm<sup>2</sup>.</p>

scholarly journals A Very Low-phase-noise CMOS Ring VCO Intended for Sensor Interfaces

2021 ◽  
Author(s):  
Mahin Esmaeilzadeh ◽  
Yves Audet ◽  
Mohamed Ali ◽  
Mohamad Sawan
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Silicon Area ◽  
Wide Range ◽  
Extended Frequency ◽  
Sensor Interfaces ◽  
Low Phase Noise ◽  
Analytical Expressions

<p>We describe in the paper a ring voltage-controlled oscillator (VCO) indicating an improved phase noise over a wide range of frequency offsets and an extended frequency/voltage tuning range. The phase noise is improved by leveraging a better linearity approach, while reducing the VCO gain and maintaining wide tuning range. The proposed VCO is a block of a time-domain comparator embedded in a monitoring and readout circuit of an industrial sensor interface. An analytical model is extracted resulting in closed-form expressions for both input-referred noise and phase noise of the VCO. Employing the analytical expressions, the contributed noise and phase noise limitations are fully addressed, and all the effective factors are investigated. The prototype of the proposed VCO was implemented and fabricated in a 0.35 µm CMOS process. The integrated VCO consumes 0.903 mW from a 3.3 V supply, when running at its maximum frequency of 9.37 MHz. The measured phase noise of the proposed VCO is -147.57 dBc/Hz at 1 MHz offset from the 9.37 MHz oscillation frequency, and the occupied silicon area of circuit is 0.005 mm<sup>2</sup>.</p>

A NOVEL WIDEBAND CMOS VCO USING SWITCH CAPACITORS ARRAY FOR RF APPLICATIONS

2012 ◽  
Vol 21 (05) ◽  
pp. 1250046
Author(s):  
MOHAMMAD NIABOLI-GUILANI ◽  
MAHROKH MAGHSOODI ◽  
ALIREZA SABERKARI ◽  
REZA MESHKIN
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Tuning Range ◽  
High Efficiency ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Voltage Variation ◽  
Low Power Dissipation ◽  
Tuning Frequency

This paper presents a novel low power consumption, low phase noise, and high tuning range CMOS cross-coupled voltage-controlled oscillator (VCO). Using common mode double-pseudo-resistance technique in the proposed circuit leads to low power dissipation without degrading the phase noise. Additionally, band-switching capacitor array is employed in order to increase the tuning range. The schematic circuit of the proposed VCO is simulated in 0.18 μm 1P6M CMOS process and simulation results show high efficiency of the proposed circuit. The overall tuning frequency range is from 1.7 GHz to 3.18 GHz (59%) with tuning voltage variation range from 0 V to 1.5 V. The proposed VCO circuit has phase noise of -102.6 and -124.3 dBc/Hz at 100 KHz and 1 MHz offset frequency from the carrier, respectively, while consumes 1.98 mW power at 1.5 V supply voltage.

scholarly journals An Ultra-Low-Power K-Band 22.2 GHz-to-26.9 GHz Current-Reuse VCO Using Dynamic Back-Gate-Biasing Technique

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Ultra Low Power ◽  
Current Reuse ◽  
K Band

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.

scholarly journals A Novel Fast-Locking ADPLL Based on Bisection Method

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1382
Author(s):  
Xiaoying Deng ◽  
Huazhang Li ◽  
Mingcheng Zhu
Keyword(s):  
High Performance ◽  
Tuning Range ◽  
Frequency Control ◽  
Control Word ◽  
Cmos Process ◽  
Bisection Method ◽  
Reference Frequency ◽  
Wide Tuning Range ◽  
Cascade Structure ◽  
And Control

Based on the idea of bisection method, a new structure of All-Digital Phased-Locked Loop (ADPLL) with fast-locking is proposed. The structure and locking method are different from the traditional ADPLLs. The Control Circuit consists of frequency compare module, mode-adjust module and control module, which is responsible for adjusting the frequency control word of digital-controlled-oscillator (DCO) by Bisection method according to the result of the frequency compare between reference clock and restructure clock. With a high frequency cascade structure, the DCO achieves wide tuning range and high resolution. The proposed ADPLL was designed in SMIC 180 nm CMOS process. The measured results show a lock range of 640-to-1920 MHz with a 40 MHz reference frequency. The ADPLL core occupies 0.04 mm2, and the power consumption is 29.48 mW, with a 1.8 V supply. The longest locking time is 23 reference cycles, 575 ns, at 1.92 GHz. When the ADPLL operates at 1.28 GHz–1.6 GHz, the locking time is the shortest, only 9 reference cycles, 225 ns. Compared with the recent high-performance ADPLLs, our design shows advantages of small area, short locking time, and wide tuning range.

Sign in / Sign up

Export Citation Format

Share Document