DEPTH-RESOLVED SOFT X-RAY EMISSION SPECTROSCOPY OF Si-BASED MATERIALS

2002 ◽  
Vol 09 (01) ◽  
pp. 461-467 ◽  
Author(s):  
A. V. ZIMINA ◽  
A. S. SHULAKOV ◽  
S. EISEBITT ◽  
W. EBERHARDT
Keyword(s):  
Electronic Structure ◽  
Depth Resolution ◽  
Surface Region ◽  
Primary Electron ◽  
Depth Information ◽  
Near Surface ◽  
X Ray ◽  
Chemical Phase ◽  
Information Depth ◽  
Postimplantation Annealing

We discuss a soft X-ray emission (SXE) valence band (VB) spectroscopy method for the study of the electronic structure and chemical phase composition of solids in a near-surface region with depth resolution. The depth information is obtained by variation of the energy of the incident electron beam used to excite the SXE spectra. As the information depth can be varied from about 1 nm to 1 μm in silicon, this method is suitable for the investigation of materials of modern micro- and nanoelectronics. VB → core level (Si 2p or Al 2p) transitions in Si-based materials are used to demonstrate the technique. It was found that the contribution of the signal from the near-surface region (< 1.5 nm) can be substantial (up to 50%) when the primary electron energy does not exceed the Si L 2,3 threshold by more than 150 eV. The technique is applied to Al impurities in a Si matrix, produced by ion implantation. The electronic structure at the Al sites and depth distribution of the Al impurity change markedly after postimplantation annealing. The observed electronic structure after annealing is in agreement with electronic structure calculations for substitutional Al impurities in a crystalline Si lattice.

Electronic Impact of Inclusions in Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Erik M. Muller ◽  
John Smedley ◽  
Balaji Raghothamachar ◽  
Mengjia Gaowei ◽  
Jeffrey W. Keister ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Secondary Phase ◽  
Surface Region ◽  
Phase Region ◽  
Electron Trapping ◽  
Near Surface ◽  
X Ray ◽  
Photoconductive Gain ◽  
Single Crystal Diamond ◽  
Topography Data

AbstractX-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.

scholarly journals Anomalous Grazing X-ray Reflectometry for Determining the Number Density of Atoms in the Near-Surface Region

1996 ◽  
Vol 37 (1) ◽  
pp. 39-44 ◽  
Author(s):  
Masatoshi Saito ◽  
Eiichiro Matsubara ◽  
Yoshio Waseda
Keyword(s):  
Surface Region ◽  
Number Density ◽  
Near Surface ◽  
X Ray

Revealing the mechanism of the early stages of Ni–W RABiTS oxidation

2010 ◽  
Vol 25 (12) ◽  
pp. 2362-2370 ◽  
Author(s):  
Andrey V. Blednov ◽  
Oleg Yu. Gorbenko ◽  
Dmitriy P. Rodionov ◽  
Andrey R. Kaul
Keyword(s):  
Internal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Oxidation Mechanism ◽  
Surface Oxidation ◽  
Surface Region ◽  
Near Surface ◽  
Precise Position ◽  
X Ray ◽  
Early Stages ◽  
Phase And Chemical Composition

The early stages of surface oxidation of biaxially textured Ni–W tapes were studied using thermodynamic calculations along with experimental tape oxidation at low P(O2). Tape phase and chemical composition, surface morphology, and roughness were examined using x-ray diffraction (XRD), energy-dispersive x-ray analysis (EDX), secondary ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For a Ni0.95W0.05 alloy tape, the precise position of the tape oxidation line in P(O2)–T coordinates was established. This line includes a break at T ≈ 650 °C that originates from the change of the W oxidation mechanism from internal oxidation to oxidation on a free surface accompanied by segregation of the alloy components in the tape near-surface region. The surface roughness of a polished tape increased drastically during internal oxidation of W; further tape oxidation did not affect the integral roughness parameters, but introduced numerous small (˜;100 nm) features on the tape surface comprising NiO precipitates.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

X-Ray diagnostics of 2D deformation profiles in crystals with periodically distorted near-surface region

1992 ◽  
Vol 130 (2) ◽  
pp. 263-271 ◽  
Author(s):  
T. E. Goureev ◽  
A. Yu. Nikulin ◽  
P. V. Petrashen
Keyword(s):  
Surface Region ◽  
Near Surface ◽  
X Ray

In situinvestigation of the non-linear optical crystal rubidium titanyl arsenate, RbTiOAsO4, under applied electric field using X-ray imaging

2007 ◽  
Vol 40 (3) ◽  
pp. 505-512 ◽  
Author(s):  
D. Walker ◽  
P. A. Thomas ◽  
P. Pernot-Rejmánková ◽  
J. Baruchel
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Surface Region ◽  
Uniform Field ◽  
Linear Optics ◽  
Near Surface ◽  
X Ray ◽  
Non Linear ◽  
Linear Optical ◽  
Section Topography

Recent work on the non-linear optical single-crystal rubidium titanyl arsenate (RbTiOAsO4, RTA) has shown that it exhibits behaviour consistent with a ferroelectric semiconductor under large applied electric fields, with the development of a non-uniform field in the near-surface region. To confirm aspects of the proposed model, the behaviour of 001 slices of initially single-domain RTA, patterned with periodic Ag electrodes of spacing 38 µm, as for periodic poling in non-linear optics, were investigated using synchrotron X-ray section topography with the electric field appliedin situwhile under X-ray illumination at the ID19 topography beamline of the ESRF, Grenoble. The results of white-beam section topography as both a function of crystal to film distance, and under DC voltage are reported, confirming that there is a bending of the planes in the near-surface region. The strain in the near-surface region was examined directly using high-resolution monochromatic X-ray section topography. This revealed an extensive strain of 3 (±1) × 10−4at 1 kV, indicating that the electrostrictive coefficient, γ3333, in RTA is positive in sign.

Sin2ψ-based residual stress gradient analysis by energy-dispersive synchrotron diffraction constrained by small gauge volumes. I. Theoretical concept

2013 ◽  
Vol 46 (3) ◽  
pp. 610-618 ◽  
Author(s):  
M. Meixner ◽  
M. Klaus ◽  
Ch. Genzel
Keyword(s):  
Residual Stress ◽  
Energy Dispersive ◽  
Narrow Slit ◽  
X Rays ◽  
Synchrotron Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Least Squares Fit ◽  
Gauge Volume ◽  
Information Depth

The influence of the gauge volume size and shape on the analysis of steep near-surface residual stress gradients by means of energy-dispersive synchrotron diffraction is studied theoretically. Cases are considered where the irradiated sample volume is confined by narrow-slit systems, in both the primary and the diffracted beam, to dimensions comparable to the `natural' 1/einformation depth τ1/eof the X-rays. It is shown that the ratio between τ1/e, defined by the material's absorption, and the immersion depthhGVof the gauge volume into the sample is the crucial parameter that shapes thedψhklor ∊ψhklversussin2ψ distributions obtained in the Ψ mode of X-ray stress analysis. Since the actual information depth 〈z〉GVto which the measured X-ray signal has to be assigned is a superposition of geometrical and exponential weighting functions, ambiguities in the conventional plot of the Laplace stressesversus〈z〉GVmay occur for measurements performed using narrow-slit configurations. To avoid conflicts in data analysis in these cases, a modified formalism is proposed for the evaluation of the real space residual stress profiles σ||(z), which is based on a two-dimensional least-squares fit procedure.

THE SURFACE STRUCTURE OF A LOW Pd Cu/Pd-(110) CRYSTAL ALLOY

1994 ◽  
Vol 01 (04) ◽  
pp. 569-571 ◽  
Author(s):  
M. BOWKER ◽  
M. NEWTON ◽  
S.M. FRANCIS ◽  
M. GLEESON ◽  
C. BARNES
Keyword(s):  
Surface Structure ◽  
Surface Region ◽  
Single Scattering ◽  
Alloy Surface ◽  
High Concentration ◽  
Near Surface ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Layer 2

X-ray photoelectron diffraction studies of this alloy surface have been carried out and indicate that there is a significant expansion of the lattice in the near-surface region due to the high concentration of Pd in layer 2. Preliminary single scattering calculations lend support to this proposal for the surface structure, and place this expansion in the subsurface mainly between layers 2 and 3.

Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

2007 ◽  
Vol 52 (8) ◽  
pp. 898-900 ◽  
Author(s):  
M. T. Normuradov ◽  
A. K. Tashatov ◽  
A. S. Rysbaev ◽  
Zh. B. Khuzhaniyazov ◽  
Yu. Yu. Yuldashev ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Surface Region ◽  
Near Surface ◽  
Boron Ions
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