FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR
2004 ◽
Vol 03
(01n02)
◽
pp. 155-160
Keyword(s):
Peculiarities of the fabrication of field effect transistor (FET) at nanoscaled size on ultrathin silicon-on-insulator (SOI) was studied in details. Two types of FET transistor were successfully realized: in-plane-gate FET (IPGFET) with 40 nm minimum channel size and multichannel top-gate MOSFET on silicon-on-insulator. The deep submicron top-gate of Ti/Au embraces each of the conductive oxidized silicon wires placed with 400 nm pitch. The type and concentration of carries in a conductive channel of the ultrathin SOI was controlled by a bottom gate. The fabricated transistors demonstrated high transconductance and low threshold voltage. Some results of electron properties of the nano-FET transistors are presented.
2001 ◽
Vol 19
(3)
◽
pp. 800
◽
2002 ◽
Vol 12
(5)
◽
pp. 428-438
Keyword(s):
Keyword(s):
2003 ◽
Vol 20
(5)
◽
pp. 767-769
◽
2014 ◽
Vol 26
◽
pp. 506-511
◽
Keyword(s):