THIN SILICON STRUCTURES FABRICATION BY WET ANISOTROPIC ETCHING

AJAY AGARWAL; X. L. ZHANG; T. GAN; J. SINGH

doi:10.1142/s1465876303001150

THIN SILICON STRUCTURES FABRICATION BY WET ANISOTROPIC ETCHING

International Journal of Computational Engineering Science ◽

10.1142/s1465876303001150 ◽

2003 ◽

Vol 04 (02) ◽

pp. 311-314

Author(s):

AJAY AGARWAL ◽

X. L. ZHANG ◽

T. GAN ◽

J. SINGH

Keyword(s):

Anisotropic Etching ◽

Silicon Structures ◽

Wet Anisotropic Etching ◽

Thin Silicon

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FABRICATION OF PYRAMIDAL CAVITY STRUCTURE WITH MICRON-SIZED TIP USING ANISOTROPIC KOH ETCHING OF SILICON (100)

Jurnal Teknologi ◽

10.11113/jt.v74.4846 ◽

2015 ◽

Vol 74 (10) ◽

Cited By ~ 1

Author(s):

Ummikalsom Abidin ◽

Burhanuddin Yeop Majlis ◽

Jumril Yunas

Keyword(s):

Model Comparison ◽

3D Structure ◽

Three Dimensional ◽

Size Variation ◽

Anisotropic Etching ◽

Etching Solution ◽

Cavity Structure ◽

Wet Anisotropic Etching ◽

Etching Selectivity ◽

Koh Etching

Microelectromechanical System (MEMS) are systems of micron-sized structures and typically integrated with microelectronic components. Bulk micromachining using wet anisotropic etching is able to etch silicon substrates to a desired three-dimensional (3D) structure, depending on the silicon crystallographic orientation. To date, MEMS components i.e. thermal, pressure, mechanical, bio/chemical sensors have been fabricated with wet anisotropic etching of silicon. This paper presents the fabrication of a 3D pyramidal cavity structure with micron-sized tip of silicon (100) using anisotropic KOH etching of w/w 45 % at 80 oC temperature. Volume percent of 10 % IPA as a less polar diluent is added to the KOH etching solution in saturating the solution and controlling the etching selectivity and rate. Smooth etched silicon surface of hillock free is able to be achieved with IPA addition to the KOH etching solution. A characteristic V-shaped cavity with side angle of 54.8 degrees has successfully been formed and is almost identical to the theoretical structure model. Comparison of two different silicon nitride window masks on the micron-size tip formation is also investigated. Under etch, over etch and etching selectivity, as common problems effecting the micron-tip size variation, are also addressed in this work. In conclusion, anisotropic KOH etching as a simple, fast and inexpensive bulk micromachining technique, in fabricating 3D MEMS structure using silicon (100), is validated in this work.

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Evaluation of Thermal Characterization Techniques and Tools for Thermal Conductivity Measurement of Sub 100 Angstrom Thick Silicon Layers

ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference, Volume 1 ◽

10.1115/ht2007-32904 ◽

2007 ◽

Author(s):

Keivan Etessam-Yazdani ◽

Mehdi Asheghi

Keyword(s):

Thermal Conductivity ◽

Conductivity Measurement ◽

Thermal Characterization ◽

Phonon Transport ◽

Thermal Conductivity Measurement ◽

Great Success ◽

Silicon Structures ◽

Thin Silicon ◽

20 Nm

Experimental measurement of thermal conductivity is considered the most reliable tool for the study of phonon transport in ultra-thin silicon structures. While there has been a great success in thermal conductivity measurement of ultra-thin silicon layers down to 20 nm over the past decade, it is not clear if the existing techniques and tools can be extended to the measurements of sun 100 Angstrom layers. In this paper, an analytical study of the feasibility of electrical Joule heating and thermometry in patterned metal bridges is presented. It is concluded that thermal conductivity of silicon layers as thin as 5 nm can be obtained (uncertainty 20%) by performing steady-state measurements using an on-substrate nanoheater structure. The thermal characterization of silicon layers as thin as 1 nm may be possible using frequency domain measurements.

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