Collisional-Radiative Calculation of the Population Inversion in the Argon Ion Laser

1972 ◽  
Vol 11 (10) ◽  
pp. 1501-1507 ◽  
Author(s):  
Takashi Fujimoto
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.


1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  

1977 ◽  
Vol 13 (10) ◽  
pp. 808-809 ◽  
Author(s):  
M. Birnbaum ◽  
A. Tucker ◽  
C. Fincher

1993 ◽  
Vol 47 (11) ◽  
pp. 1767-1771 ◽  
Author(s):  
Ching-Hui Tseng ◽  
Charles K. Mann ◽  
Thomas J. Vickers

Detection limits of about 1 g/m2 are demonstrated for the Raman determination of two organic materials, polydimethylsiloxane and dimethyl methylphosphonate, on an aluminum surface. A fiber-optic-based system is used. A large sample area is scanned to overcome heterogeneity in sample coverage. Measurements are made without use of an internal standard. Results are reported for both a Hadamard transform technique with argon-ion laser excitation and a conventional spectrometer with diode laser excitation.


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