In Situ Technique for Dynamic Fluid Film Pressure Measurement during Chemical Mechanical Polishing

2000 ◽  
Vol 147 (7) ◽  
pp. 2741 ◽  
Author(s):  
David Bullen ◽  
Alicia Scarfo ◽  
Alia Koch ◽  
Dewi P. Y. Bramono ◽  
Jonathan Coppeta ◽  
...  
Keyword(s):  
Pressure Measurement ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Fluid Film ◽  
Film Pressure ◽  
In Situ Technique

Effect of pH on ceria–silica interactions during chemical mechanical polishing

2005 ◽  
Vol 20 (5) ◽  
pp. 1139-1145 ◽  
Author(s):  
Jeremiah T. Abiade ◽  
Wonseop Choi ◽  
Rajiv K. Singh
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Substrate Interaction ◽  
Atomic Force ◽  
Silica Removal

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

Investigation of particle agglomeration with in-situ generation of oxygen bubble during the tungsten chemical mechanical polishing (CMP) process

2019 ◽  
Vol 218 ◽  
pp. 111133 ◽  
Author(s):  
Yeon-Ah Jeong ◽  
Maneesh Kumar Poddar ◽  
Heon-Yul Ryu ◽  
Nagendra Prasad Yerriboina ◽  
Tae-Gon Kim ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Particle Agglomeration ◽  
Oxygen Bubble ◽  
In Situ Generation

Auxiliary mechanism of in-situ micro-nano bubbles in oxide chemical mechanical polishing

2021 ◽  
Author(s):  
Lei Xu ◽  
Pengzhan Liu ◽  
Hong Lei ◽  
Kihong Park ◽  
Eungchul Kim ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Auxiliary Mechanism

An in situ study of chemical-mechanical polishing behaviours on sapphire (0001) via simulating the chemical product-removal process by AFM-tapping mode in both liquid and air environments

Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19692-19700 ◽  
Author(s):  
Xiaolei Shi ◽  
Li Xu ◽  
Yan Zhou ◽  
Chunli Zou ◽  
Rongrong Wang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Chemical Product ◽  
Tapping Mode ◽  
In Situ Study ◽  
Removal Process ◽  
Product Removal

We present an in situ study of chemical-mechanical polishing behaviours on sapphire (0001) via simulating the chemical product-removal process by AFM-tapping mode.

In-situ Metrology for End Point Detection during Chemical Mechanical Polishing of Shallow Trench Isolation Structure

2005 ◽  
Vol 867 ◽  
Author(s):  
Parshuram B. Zantye ◽  
S. Mudhivarthi ◽  
Ashok Kumar ◽  
David Evans
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shallow Trench Isolation ◽  
End Point ◽  
Trench Isolation ◽  
End Point Detection ◽  
In Situ Metrology ◽  
Point Detection

AbstractEfficient end point detection (EPD) helps prevent numerous Chemical Mechanical Polishing (CMP) process defects such as dishing, erosion, excessive over-polish etc. During the CMP of Shallow Trench Isolation (STI) structures, the process should be effectively stopped at the buried Si3N4 layer to prevent any/all of the aforementioned process defects. In this research, novel in-situ metrology technique that used the real time tracking of Coefficient of Friction (COF) data during polishing was employed for EPD during STI-CMP. The experiments were performed on the CETR CP-4 CMP Tester using 1“X 1” sample coupons having a 2 ‘mu;m pitch STI pattern. The COF signal during polishing is a characteristic signature of the given process parameters and conditions. The in-situ EPD was based on the principle that the COF values are strongly dependent upon the surface of the materials that are being polished. Extended polishing to polish the underlying layer after the process end point was reached, can give an estimate of the polishing slurry selectivity with respect to the buried layer. The ex-situ surface characterization of coupons was performed at different points of the process using Atomic Force Microscopy (AFM). The repeatability and reliability of this technique was evaluated after carrying out multiple tests at similar process conditions. The demonstrated methodology can also be implemented for characterization of polishing pads and slurries besides STI-CMP process optimization.

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