In Situ Electrochemical Investigation of Tungsten Electrochemical Behavior during Chemical Mechanical Polishing

1998 ◽  
Vol 145 (9) ◽  
pp. 3190-3196 ◽  
Author(s):  
David J. Stein ◽  
Dale Hetherington ◽  
Terry Guilinger ◽  
Joseph L. Cecchi
2005 ◽  
Vol 20 (5) ◽  
pp. 1139-1145 ◽  
Author(s):  
Jeremiah T. Abiade ◽  
Wonseop Choi ◽  
Rajiv K. Singh

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.


2019 ◽  
Vol 218 ◽  
pp. 111133 ◽  
Author(s):  
Yeon-Ah Jeong ◽  
Maneesh Kumar Poddar ◽  
Heon-Yul Ryu ◽  
Nagendra Prasad Yerriboina ◽  
Tae-Gon Kim ◽  
...  

Author(s):  
Jyh-Wei Hsu ◽  
Shao-Yu Chiu ◽  
Ming-Shih Tsai ◽  
Bau-Tong Dai ◽  
Ming-Shiann Feng ◽  
...  

2000 ◽  
Vol 147 (7) ◽  
pp. 2741 ◽  
Author(s):  
David Bullen ◽  
Alicia Scarfo ◽  
Alia Koch ◽  
Dewi P. Y. Bramono ◽  
Jonathan Coppeta ◽  
...  

Author(s):  
Lei Xu ◽  
Pengzhan Liu ◽  
Hong Lei ◽  
Kihong Park ◽  
Eungchul Kim ◽  
...  

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