High Voltage GaN Lateral Photoconductive Semiconductor Switches

2017 ◽  
Vol 6 (11) ◽  
pp. S3099-S3102 ◽  
Author(s):  
Andrew D. Koehler ◽  
Travis J. Anderson ◽  
Ani Khachatrian ◽  
Anindya Nath ◽  
Marko J. Tadjer ◽  
...  
Keyword(s):  
High Voltage ◽  
Semiconductor Switches

High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN:Fe template

2016 ◽  
Vol 13 (5-6) ◽  
pp. 374-377 ◽  
Author(s):  
Yunfeng Chen ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Fangfang Ren ◽  
Rong Zhang ◽  
...  
Keyword(s):  
High Voltage ◽  
Semiconductor Switches

scholarly journals A High Voltage Gain Step-up Resonant DC-DC Converter Topology with Reduced Switch Count

2020 ◽  
Vol 6 (5) ◽  
pp. 26-31
Author(s):  
A Sowmya ◽  
Dr. D Murali
Keyword(s):  
High Voltage ◽  
High Efficiency ◽  
Resonant Circuit ◽  
Voltage Gain ◽  
Power Semiconductor ◽  
Semiconductor Switches ◽  
Switching Losses ◽  
High Voltage Gain ◽  
Converter Topology ◽  
The Time Domain

The resonant converters have attracted a lot of attention because of their high efficiency and low switching losses. This paper presents the analysis of a high voltage gain non-isolated step-up DC-DC converter topology using resonant technology. The proposed converter configuration has reduced number of power semiconductor switches compared to the existing isolated converter topology having four semiconductor switches. The proposed topology employs capacitor-inductor-capacitor (C-L-C) resonant circuit configuration. The size of the proposed converter and the losses in the converter are greatly reduced. Both the converters with resonant components are simulated in Matlab/Simulink platform to validate their performance. The time-domain simulation results demonstrate that the proposed non-isolated converter gives improved voltage gain compared to the existing two-stage isolated resonant DC-DC converter.

System for nanosecond and picosecond laser synchronization using high-voltage semiconductor switches

1989 ◽  
Vol 10 (2) ◽  
pp. 87-103
Author(s):  
N. G. Basov ◽  
V. L. Vasin ◽  
M. P. Kalashnikov ◽  
G. Korn ◽  
M. Yu. Mazur ◽  
...  
Keyword(s):  
High Voltage ◽  
Picosecond Laser ◽  
Semiconductor Switches

scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

High voltage electromagnetic pulse generation using semiconductor switches

2012 ◽  
Vol 24 (2) ◽  
pp. 497-500
Author(s):  
梁勤金 Liang Qinjin ◽  
邓晓磊 Deng Xiaolei ◽  
石小燕 Shi Xiaoyan ◽  
潘文武 Pan Wenwu
Keyword(s):  
High Voltage ◽  
Electromagnetic Pulse ◽  
Pulse Generation ◽  
Semiconductor Switches

scholarly journals A Three-Phase Interleaved Floating Output Boost Converter

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Ajmal Farooq ◽  
Zeeshan Malik ◽  
Dongchang Qu ◽  
Zhaohui Sun ◽  
Guozhu Chen
Keyword(s):  
Renewable Energy ◽  
High Voltage ◽  
Energy Systems ◽  
Voltage Gain ◽  
Renewable Energy Systems ◽  
Semiconductor Switches ◽  
High Voltage Gain ◽  
Three Phase ◽  
Voltage Stress ◽  
Interleaved Structure

High step-up dc-dc converter is an essential part in several renewable energy systems. In this paper, a new topology of step-up dc-dc converter based on interleaved structure is proposed. The proposed converter uses three energy storing capacitors to achieve a high voltage gain. Besides the high voltage gain feature, the proposed converter also reduces the voltage stress across the semiconductor switches. This helps in using low rating switching devices which can reduce the overall size and cost of the converter. The operating principle of the proposed converter is discussed in detail and its principle waveforms are analyzed. An experiment is carried out on a 20 V input, 130 V output, and 21 W power prototype of the proposed converter in the laboratory to verify the performance of the proposed converter. An efficiency of 91.3% is achieved at the rated load.

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