scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

Photo-Ionization Effects in High Gain Gallium Arsenide Photoconductive Semiconductor Switches

2009 ◽  
Vol 29 (2) ◽  
pp. 496-499 ◽  
Author(s):  
刘鸿 Liu Hong ◽  
阮成礼 Ruan Chengli
Keyword(s):  
Gallium Arsenide ◽  
High Gain ◽  
Semiconductor Switches ◽  
Photo Ionization

scholarly journals High Gain DC-DC Converter Integrating Dickson Charge Pump with Coupled Inductor Technique

2021 ◽  
Vol 7 (6) ◽  
pp. 272-277
Author(s):  
P. Nithin and Dr. R. Rajeswari
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
High Gain ◽  
Voltage Gain ◽  
Power Switch ◽  
High Voltage Gain ◽  
Voltage Stress ◽  
Input Side ◽  
State Resistance ◽  
Current Ripple

In this paper, a novel high voltage gain DC-DC converter based on coupled inductor and voltage multiplier technique is proposed. The benefits of the proposed converter are ultra-high voltage gain, low voltage stress across the power switch and very low input current ripple by employing a low current ripple structure (LCR) at the input side. A low on state resistance (RDS(on)) of the power switch can be employed since the voltage stress is a maximum of 25% of the output voltage and the conduction losses of the switch is also reduced. Design of a 1.9kW, 48V at the low voltage side and 430V at the high voltage side is done and verified by simulation. Simulation results show an efficiency of over 93% when operating in continuous conduction mode (CCM).

Study on Selective Leakage Protection System of Mine High Voltage Grid Based on Harmonic Phase Comparison

2015 ◽  
Vol 9 (1) ◽  
pp. 253-262
Author(s):  
Liu Zhongfu ◽  
Zhang Junxing ◽  
Shi Lixin ◽  
Yang Yaning
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
Power Supply System ◽  
Supply System ◽  
Neutral Point ◽  
Arc Suppression Coil ◽  
Zero Sequence ◽  
Harmonic Extraction ◽  
Power Direction ◽  
The Stability

As for the wide application of arc suppression coil to the grounding in neutral point of mine high voltage grid, grid leakage fault rules and harmonic characteristics of the neutral point grounding system through arc suppression coil are analyzed, the selective leakage protection program “zero-sequence voltage starts, fifth harmonics of grid zerosequence voltage and zero-sequence current are extracted for phase comparison” is proposed, and corresponding fifth harmonic extraction circuit and power direction discrimination circuit are designed. The experimental results show that the protective principle applies not only to the neutral point insulated power supply system, but also to the power supply system in which neutral point passes arc suppression coil, which can solve selective leakage protection problems under different neutral grounding ways, improving the reliability of selective leakage and guaranteeing the stability of the action value.

High Voltage GaN Lateral Photoconductive Semiconductor Switches

2017 ◽  
Vol 6 (11) ◽  
pp. S3099-S3102 ◽  
Author(s):  
Andrew D. Koehler ◽  
Travis J. Anderson ◽  
Ani Khachatrian ◽  
Anindya Nath ◽  
Marko J. Tadjer ◽  
...  
Keyword(s):  
High Voltage ◽  
Semiconductor Switches

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN:Fe template

2016 ◽  
Vol 13 (5-6) ◽  
pp. 374-377 ◽  
Author(s):  
Yunfeng Chen ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Fangfang Ren ◽  
Rong Zhang ◽  
...  
Keyword(s):  
High Voltage ◽  
Semiconductor Switches

A 12-kV High-Voltage Semiconductor Switch Based on 76-mm Reverse-Switching Dynistors

2011 ◽  
Vol 39 (1) ◽  
pp. 285-287 ◽  
Author(s):  
Xiaoping He ◽  
Haiyang Wang ◽  
Binjie Xue ◽  
Weiqing Chen ◽  
Jingzhi Zhou ◽  
...  
Keyword(s):  
High Voltage ◽  
Semiconductor Switch

Picosecond high-voltage drift diodes based on gallium arsenide

2003 ◽  
Vol 37 (12) ◽  
pp. 1425-1427 ◽  
Author(s):  
A. V. Rozhkov ◽  
V. A. Kozlov
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
Voltage Drift
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