semiconductor switches
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2021 ◽  
Vol 92 (11) ◽  
pp. 113106
Author(s):  
S. C. Schaub ◽  
Z. W. Cohick ◽  
B. W. Hoff

2021 ◽  
Vol 2089 (1) ◽  
pp. 012021
Author(s):  
Praveen Kumar Nalli ◽  
Kalyan Sagar Kadali ◽  
Ramu Bhukya ◽  
V. Rajeswari ◽  
Durga Prasad Garapati

Abstract Now-a-days Usage of Multilevel Inverters application is very wide in the industrial applications. Keeping in view of industrial applications, a multi-level inverter with a solar PV array is designed in this paper to deliver power to the Alternating Current based load. A step-up converter is used at the input side of the three-phase multilevel inverter, which delivers the energy for the three-phase load, to regulate the output voltage of the solar Photovoltaic panel. The multilevel inverter utilizes 9 switching devices with five level sources in accordance to the usage of the level of sources in recent topologies. However, the advantage of this topology is that it uses fewer semiconductor switches than current topologies. Eventually, the paper includes the results of the modelling in the MATLAB and the experimental implementation of the proposed topology.


2021 ◽  
Vol 2089 (1) ◽  
pp. 012019
Author(s):  
Durga Prasad Garapati ◽  
Praveen Kumar Nalli ◽  
K P Swaroop ◽  
Y Vijay Kumar

Abstract In this article different multi-level inverter (MLI) configuration is introduced by a decreased quantity of power elements. At the output side the MLI topology generates the seven level voltage waveform with minimum number of components. The said topology configuration requires less dc voltage and power semiconductor switches. It also reduces the voltage block on switches, which reduces the inverter topology complexity and costs. Such capabilities were discovered by contrasting the topology to traditional topologies from the above perspectives. Testing were carried out to demonstrate the efficacy of the generalized MLI topology in both simulation and hardware, and the findings are presented for better understanding.


2021 ◽  
Vol 8 (5) ◽  
pp. 769-774
Author(s):  
Neerudi Bhoopal ◽  
Dokku Sivanaga Malleswara Rao ◽  
Bharath Kumar Narukullapati ◽  
Idamakanti Kasireddy ◽  
Devineni Gireesh Kumar

This paper proposed a new topology of a symmetric single-phase multilevel inverter with the smaller number of semiconductor switches and optimized low-frequency control methods to optimize the Total Harmonic Distortion. A nine-level single phase output is obtained by eight number of active semiconductor switches, four diodes and four capacitors from two asymmetrical dc sources. The selected harmonic order in the output voltage is eliminated by the PWM (SHE-PWM) based on selective harmonic elimination. To optimize the switching angles, an ant colony optimization is introduced. The proposed SHE-PWM and ant optimization are implemented and tested for THD on the SIMULINK platform. The proposed approach offers less THD and is best suited to high-power applications with medium voltage.


2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
S. Siva Subramanian ◽  
R. Saravanakumar ◽  
Bibhu Prasad Ganthia ◽  
S. Kaliappan ◽  
Surafel Mustefa Beyan ◽  
...  

Improvements in the material characteristics of bandgap semiconductors allow the use of high-temperature, high-voltage, and fast switch rates in power devices. Another good reason for creating new Si power converter devices is that previous models perform poorly. The implementation of novel power electronic converters means high energy efficiency but a more logical use of electricity. At this moment, titanium dioxide and gallium nitride are the most prospective semiconductor materials because of their great features, established technology, and enough supply of raw components. This study is focused on providing an in-depth look at recent developments in manufacturing Si-C- and high-powered electronic components and showcasing the whole scope of the newly developing product generation.


Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.


2021 ◽  
Vol 11 (18) ◽  
pp. 8302
Author(s):  
Giuseppe Mauromicale ◽  
Alessandro Sitta ◽  
Michele Calabretta ◽  
Salvatore Massimo Oliveri ◽  
Gaetano Sequenzia

New technological and packaging solutions are more and more being employed for power semiconductor switches in an automotive environment, especially the SiC- and GaN-based ones. In this framework, new front-end and back-end solutions have been developed, and many more are in the design stage. New and more integrated power devices are useful to guarantee the performances in electric vehicles, in terms of thermal management, size reduction, and low power losses. In this paper, a GaN-based system in package solution is simulated to assess the structure temperature submitted to a Joule heating power loss. The monolithic package solution involves a half-bridge topology, as well as a driver logic. A novel integrated electromagnetic and thermal method, based on finite element simulations, is proposed in this work. More specifically, dynamic electric power losses of the copper interconnections are computed in the first simulation stage, by an electromagnetic model. In the second stage, the obtained losses’ geometrical map is imported in the finite element thermal simulation, and it is considered as the input. Hence, the temperature distribution of the package’s copper traces is computed. The simulation model verifies the proper design of copper traces. The obtained temperature swing avoids any thermal-related reliability bottleneck.


Author(s):  
Dr. S. Ravi Chandran

Abstract: A versatile operation of any electronic circuitry depends on the power source supplying the power for its operation. The buck converter is implemented using an integrated circuit(IC), LM317. The constructed buck converter was tested for load and line regulation cited in the datasheets for stability. The test and analysis for the linear buck converter was done using setup. The output measurements indicate that the power supply is functional. The measured output values results of the test circuit. The developed output power supply unit is important in measurements, laboratories and test setup. It is implemented for all general applications that require power supply unit. XL6009 module is a DC to DC BUCK-BOOST converter module that operates at a switching frequency of 400kHz. In such high frequency, it provides smaller sized filter components compared with low frequency switching regulators. An improved SingleStage Buck-Boost inverter is provided, using only three or four power semiconductor switches. The inverter can handle a wide range of dc input voltages and produce a fixed ac output voltage. The inverter is well suited to distributed power generation systems such as photovoltaic and wind power and fuel cells, for standalone or grid connected applications. The inverter has a single charge loop, a positive discharge loop and a negative discharge loop. In this complete design of the converter is carried out. This application report gives details regarding this conversion with examples


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