scholarly journals Novel Technique of MEA Sample Preparation Using a Focused Ion Beam for Scanning Electron Microscope Investigation

2007 ◽  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Microscope Investigation ◽  
Microscope Investigation ◽  
Novel Technique ◽  
Scanning Electron Microscope Investigation ◽  
Scanning Electron

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

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