While investigating the silicide formation reaction between thin bilayers of amorphous Si (a-Si) and Cr, an unintended interaction occurred between the specimens and the supporting TEM grids. In an attempt to understand this phenomenon, the interaction between a single film of a-Si and TEM grids made of Cu, Ni, Au and Mo were investigated by in situannealing in a Siemens Elmiskop 101. The 60 nm films, prepared by e-beam evaporation of pure Si onto glass substrates, covered with an acetone-soluble release agent, were amorphous.In Fig. 1 the interaction between the a-Si film and a Cu TEM grid is shown. Areas I, II, III and IV in (a) show different stages of the interaction, area IV being closest to the Cu grid bar, and area I being pure a-Si. The reaction started at about 600°C by crystallisation of the a-Si film at different spots in contact with the grid bars, and fanned out from these nucleation sites (area II).