scholarly journals Synthesis and Characterization of System In(O,OH)S/i-ZnO/n+-ZnO

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
William Vallejo ◽  
Carlos Diaz-Uribe ◽  
G. Gordillo
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Visible Radiation ◽  
Soda Lime Glass Substrate ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Cbd Method

In this work, we fabricated system In(O,OH)S/i-ZnO/n+-ZnO to be used as potential optical window in thin films solar cells. i-ZnO/n+-ZnO thin films were synthesized by reactive evaporation (RE) method and In(O,OH)S thin films were synthesized by chemical bath deposition (CBD) method; all thin films were deposited on soda lime glass substrates. Thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM), and spectral transmittance measurements. Structural results indicated that both thin films were polycrystalline; furthermore, morphological results indicated that both thin films coated uniformly soda lime glass substrate; besides, optical characterization indicated that system had more than 80% of visible radiation transmittance.

Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

2001 ◽  
Vol 16 (2) ◽  
pp. 394-399 ◽  
Author(s):  
S. Nishiwaki ◽  
T. Satoh ◽  
Y. Hashimoto ◽  
T. Negami ◽  
T. Wada
Keyword(s):  
Thin Films ◽  
Surface Composition ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Monitoring Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

Cu(In,Ga)Se2(CIGS) thin films were prepared at substrate temperatures of 350 to 500 °C. The (In,Ga)2Se2 precursor layers were deposited on Mo coated soda-lime glass and then exposed to Cu and Se fluxes to form CIGS films. The surface composition was probed by a real-time composition monitoring method. The CIGS films were characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. The transient formation of a Cu–Se phase with a high thermal emissivity was observed during the deposition of Cu and Se at a substrate temperature of 350 °C. Faster diffusion of In than Ga from the (In,Ga)2Se3 precursor to the newly formed CIGS layer was observed. A growth model for CIGS films during the deposition of Cu and Se onto (In,Ga)2Se3 precursor is proposed. A solar cell using a CIGS film prepared at about 350 °C showed an efficiency of 12.4%.

CHARACTERIZATION OF CHEMICALLY-DEPOSITED SILVER SULFIDE THIN FILMS

2009 ◽  
Vol 23 (30) ◽  
pp. 5695-5704 ◽  
Author(s):  
M. Z. MOLLA ◽  
M. R. I. CHOWDHURY ◽  
G. MUSTAFA ◽  
S. HUSSAIN ◽  
K. S. HOSSAIN ◽  
...  
Keyword(s):  
Thin Films ◽  
Stoichiometric Composition ◽  
Compositional Analysis ◽  
Silver Sulfide ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Cbd Method

Ag 2 S thin films have been deposited onto fluorinated tin oxide (FTO)-coated conducting glass substrates using chemical bath deposition (CBD) method. Photoelectrochemical (PEC) cell, optical properties, surface morphology, structural properties, compositional analysis and electrical properties of Ag 2 S thin films have been investigated. The PEC measurements indicate that the deposited Ag 2 S layers are n-type in electrical conduction. The transmittance of deposited layer is obtained to be about 13–87%. The absorbance of the films is found to decrease with increasing wavelength. The band gap of the Ag 2 S thin film is estimated to be 1.8 eV. It is observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements that the substrates are well-covered with the deposited Ag 2 S layers without cracks and pinholes. The grain size of Ag 2 S thin films is estimated from SEM measurements to be in the range 100–210 nm. The mean roughness of Ag 2 S films is found from AFM measurements to be in the range 7.20–15 nm. X-ray diffraction shows that the films are well-crystallized and the deposited layers are mainly consisting of Ag 2 S phase with (-103) preferential plane. EDX analysis shows that a nearly stoichiometric composition of Ag 2 S is obtained. The resistivity is estimated to be in the range 3.5–7.0 Ω-cm.

Structural, morphological, and optoelectrical characterization of Bi2S3 thin films grown by co-evaporation

2016 ◽  
Vol 30 (06) ◽  
pp. 1650066 ◽  
Author(s):  
F. Mesa ◽  
C. A. Arredondo ◽  
W. Vallejo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Experimental Conditions ◽  
Soda Lime Glass Substrate ◽  
Text Type ◽  
Force Microscopy ◽  
Atomic Force

This work presents the results of synthesis and characterization of polycrystalline [Formula: see text]-type Bi2S3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity [Formula: see text] was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and [Formula: see text] versus [Formula: see text] measurements, respectively. The results showed that the films grow only in the orthorhombic Bi2S3 bismuthinite phase. It was also found that the Bi2S3 films present an energy band gap [Formula: see text] of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi2S3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

scholarly journals Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering

2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Hall Effect Measurement ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Low Resistivity ◽  
Glass Substrates ◽  
Deposition Conditions

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.

Comparative studies on the morphological, structural and optical properties of NiO thin films grown by vacuum and non-vacuum deposition techniques

2021 ◽  
Author(s):  
Mohammad Shah Jamal ◽  
M.S. chowdhury ◽  
Saraswati Bajgai ◽  
M Hossain ◽  
A. Laref ◽  
...  
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Lower Surface ◽  
Soda Lime Glass ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Soda Lime Glass Substrate ◽  
The Difference ◽  
Deposited Films ◽  
Deposition Techniques

Abstract The structural and optical characteristics of Nickel oxide thin films (NiOTF) formed on the soda-lime glass substrate (SLG) under vacuum and non-vacuum conditions are investigated in this work. The difference between RFMS (Radio Frequency Magnetron Sputtering; vacuum) and SP (spray pyrolysis; non-vacuum) was helpful in the development of NiOTF. Deposited films data for this study were characterized by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), scanning probe microscopy (SPM), and optical spectrophotometer. Structural studies disclosed that NiOTF developed via RFMS technique was more uniform with large crystals and lower surface roughness in contrast to that of developed via SP technique. Transmittance spectrum divulged that the transmittance of spray pyrolyzed NiO films are ~10% less than that of ones produced by RFMS. Urbach energy analysis of NiOTF developed by RFMS and SP affirmed the findings of structural studies.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

Role of Pre-Layer Mo Films in Microstructural and Morphological Properties of Over-Layer CIGS Films

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3215-3224 ◽  
Author(s):  
Hamda A. Al-Thani ◽  
Falah S. Hasoon
Keyword(s):  
Physical Vapor Deposition ◽  
Least Square Method ◽  
Soda Lime ◽  
Least Square ◽  
Morphological Properties ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

ABSTRACTThis study focuses on establishing a microstructural and morphological correlation between CIGS films and its precursor layer of Molybdenum (Mo) coated soda-lime glass (SLG). Therefore, variations in the morphology and microstructural properties of Mo thin films, using DC planar magnetron sputtering, were induced systematically by varying the sputtering pressure from 0.6 to 16 mT with a sputtering power density of 1.2 W/cm2. Subsequently, under fixed deposition conditions (deposition rate and substrate temperature), a growth of Cu(In,Ga)Se2 (CIGS) films was carried out on the Mo-coated SLG substrates, using the 3-stage growth process of the physical vapor deposition (PVD) technique.High-Resolution Scanning Electron Microscopy (HRSEM) was used to examine the Mo and CIGS films morphology. X-Ray Diffraction (XRD) was applied to study in detail the microstructure of Mo and CIGS films. Where, the films’ crystal structure including the preferred orientation and the lattice parameters were determined by the θ/2θ XRD technique and by applying Cohen’s least-square method. Furthermore, Atomic Force Microscopy (AFM) was used to determine the root-mean-square (RMS) surface roughness of the CIGS films.

ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

2010 ◽  
Vol 24 (31) ◽  
pp. 6079-6090 ◽  
Author(s):  
I. I. RUSU ◽  
M. SMIRNOV ◽  
G. G. RUSU ◽  
A. P. RAMBU ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

Low-Temperature Synthesis and Gas Sensing Properties of Anatase TiO2 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 300-303
Author(s):  
Fu Jian Ren ◽  
Yi Sun ◽  
Liang Huang ◽  
Yun Han Ling ◽  
Jia You Feng
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Gas Sensing ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Gas Sensing Properties ◽  
Gas Response

Crystalline anatase TiO2thin films were obtained on glass substrates at 60°C, 75°C and 90°C, respectively, by liquid phase deposition (LPD) method without subsequent heat treatment. X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-Vis spectrophotometer were used to characterize the as-synthesized TiO2thin films. The H2sensing properties of the TiO2thin films based sensors were investigated. The results show that the gas sensors signal Ra/Rg (Ra: resistance in air, Rg: resistance in a sample gas) decreases with the increasing deposition temperature. The TiO2thin films obtained at deposition temperature of 60°C exhibited the maximum H2gas response at 350°C, and the magnitude of the sensor signal and the response time for 500ppm H2was 1.25 and 17s, respectively.

scholarly journals ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Transparent Conductive Oxide ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ceramic Targets

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.

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