Measurement of grading in heteroepitaxial layers

Author(s):  
M A G Halliwell ◽  
J Juler ◽  
A G Norman
2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.


1988 ◽  
Vol 138 ◽  
Author(s):  
S. J. Miles ◽  
G. S. Green ◽  
B. K. Tanner ◽  
M. A. G. Halliwell ◽  
M. H. Lyons

2015 ◽  
Vol 353 ◽  
pp. 744-749 ◽  
Author(s):  
Guoguo Yan ◽  
Feng Zhang ◽  
Yingxi Niu ◽  
Fei Yang ◽  
Xingfang Liu ◽  
...  

2008 ◽  
Vol 600-603 ◽  
pp. 207-210 ◽  
Author(s):  
Marcin Zielinski ◽  
Marc Portail ◽  
Thierry Chassagne ◽  
Yvon Cordier

We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer properties (orientation, miscut, thickness) on the residual strain of 3C-SiC films grown on silicon substrates. We show that the strain related effects are observed for both studied orientations however some of them (namely the creep effects) were up to now stated only for (100) oriented layers. We also point out the main difference in strain control between the (111) and (100) orientations.


1994 ◽  
Vol 146 (1) ◽  
pp. 371-383 ◽  
Author(s):  
G. Wagner ◽  
V. Gottschalch ◽  
R. Franzheld ◽  
S. Kriegel ◽  
P. Paufler

1995 ◽  
Vol 399 ◽  
Author(s):  
A.G. Cullis

ABSTRACTThe manner in which misfit strain can influence the morphology of heteroepitaxial layers is reviewed. Following a brief consideration of theoretical modelling, examples of experimental observations for two important materials systems, SiGe/Si and InGaAs/GaAs, are given. It is demonstrated that the formation of undulations of specific types is driven by partial elastic stress-relief and a lowering of the system free energy. Under these conditions, islands of deposit can be formed during initial growth and ripples can be produced upon continuous layers. Furthermore, the presence of surface morphological distortions and the accompanying strain fluctuations also can have a significant impact upon misfit dislocation introduction. Relationships between these fluctuations and dislocation source behaviour are described.


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