The VO2 thin film of highly optical switching rate for laser protection in infrared detector

Author(s):  
Xiongyuanyue Xiao ◽  
Da Su ◽  
Qing Cheng ◽  
Jianjun Lai ◽  
Ying Huang
Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2988
Author(s):  
Qi Wang ◽  
Shijie Zhang ◽  
Chen Wang ◽  
Rui Li ◽  
Tianhan Cai ◽  
...  

A tunable infrared optical switch based on a plasmonic structure consisting of aluminum nanoarrays with a thin film of vanadium dioxide is proposed. This optical switch can realize arbitrary wavelength-selective optical switching in the mid-infrared region by altering the radii of the aluminum nanoarrays. Furthermore, since vanadium dioxide transforms from its low-temperature insulator phase to a high-temperature metallic phase when heated or applied voltage, the optical switch can achieve two-way switching of its “ON” and “OFF” modes. Finite-difference time-domain software is used to simulate the performance of the proposed infrared optical switch. Simulation results show that the switch offers excellent optical performances, that the modulation depth can reach up to 99.4%, and that the extinction ratio exceeds −22.16 dB. In addition, the phase transition time of vanadium dioxide is on the femtosecond scale, which means that this optical switch based on a vanadium dioxide thin film can be used for ultrafast switching.


2013 ◽  
Vol 03 (02) ◽  
pp. 281-283 ◽  
Author(s):  
Dong-pei Qian ◽  
Chuan-gui Wu ◽  
Yao Shuai ◽  
Wen-bo Luo ◽  
Qiang-xiang Peng ◽  
...  

2011 ◽  
Vol 98 (7) ◽  
pp. 071105 ◽  
Author(s):  
S. B. Choi ◽  
J. S. Kyoung ◽  
H. S. Kim ◽  
H. R. Park ◽  
D. J. Park ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79668-79680 ◽  
Author(s):  
K. S. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
Vasant Sathe ◽  
V. Ganesan ◽  
...  

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.


1992 ◽  
Author(s):  
M. Fardmanesh ◽  
M. Ihsan ◽  
K. Scoles ◽  
A. Rothwarf

2013 ◽  
Vol 112 (2) ◽  
pp. 261-265 ◽  
Author(s):  
Fryad Z. Henari ◽  
Khalil E. Jasim

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3365-3368
Author(s):  
Yansong Chen ◽  
N. J. Wu ◽  
A. Ignatiev

In this paper, the dependence of infrared photoresponse of a pyroelectric thin film detector with respect to chopper frequency is studied theoretically and experimentally. The expressions of photocurrent, photovoltage and a special chopper frequency f m at which the maximum photovoltage is generated, are derived. A PMSZT/YBCO heterostructure is taken as the pyroelectric infrared detector and its photocurrent and photovoltage dependence on chopper frequency was measured. The experimental results are satisfactory and in agreement with theoretical analysis.


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