scholarly journals Resource competition and technological diversity

PLoS ONE ◽  
2021 ◽  
Vol 16 (11) ◽  
pp. e0259875
Author(s):  
Almaz Mustafin ◽  
Aliya Kantarbayeva
Keyword(s):  
Resource Competition ◽  
General System ◽  
Rate Equations ◽  
Average Output ◽  
Technological Diversity ◽  
Technological Structure ◽  
Resource Dynamics ◽  
Rate Of Decay ◽  
Production Output ◽  
Stock Flow

The work develops and investigates a mathematical model for evolution of the technological structure of an economic system where different technologies compete for the common essential resources. The model is represented by a system of consumer–resource rate equations. Consumers are technologies formalized as populations of weakly differentiated firms producing a similar commodity with like average output. Firms are characterized by the Leontief–Liebig production function in stock-flow representation. Firms self-replicate with a rate proportional to production output of the respective technology and dissolve with a constant rate of decay. The resources are supplied to the system from outside and consumed by concerned technologies; the unutilized resource amounts are removed elsewhere. The inverse of a per firm break-even resource availability is proposed to serve as a measure for competitiveness towards a given resource. The necessary conditions for coexistence of different technologies are derived, according to which each contender must be a superior competitor for one specific resource and an inferior competitor for the others. The model yields a version of the principle of competitive exclusion: in a steady state, the number of competing technologies cannot exceed the number of limiting resources. Competitive outcomes (either dominance or coexistence) in the general system of multiple technologies feeding on multiple essential resources are shown to be predictable from knowledge of the resource-dependent consumption and growth rates of each technological population taken alone. The proposed model of exploitative competition with explicit resource dynamics enables more profound insight into the patterns of technological change as opposed to conventional mainstream models of innovation diffusion.

scholarly journals TECHNOLOGICAL POTENTIAL FOR DEVELOPMENT OF INNOVATION ECONOMY IN RUSSIA: THE LIMITS AND LIMITATIONS OF THE SIXTH TECHNOLOGICAL ORDER

2020 ◽  
pp. 68-75
Author(s):  
I. S. Prokhorova
Keyword(s):  
World Market ◽  
Global Competitiveness ◽  
Technological Gap ◽  
Technological Diversity ◽  
Innovation Potential ◽  
Russian Economy ◽  
Global Innovation ◽  
Technological Potential ◽  
Technological Structure ◽  
Innovation Economy

The subject of the study is the technological potential of innovative economy development in Russia to ensure the country’s global competitiveness in the world market. The methodological basis is the theory of technological structures. The research methodology is based on the analysis of the main indicators of technological innovation potential of the country’s economy to overcome the technological gap and implement the strategy of equal entry into the sixth technological order. The global innovation index has been analyzed in the article. The technological structure of the country’s economy in accordance with technological order has been examined. The limitations in the development of technological potential have been considered. The scientific reserve in the technology of the sixth technological order has been assessed. It has been shown, that the technological structure of the Russian economy is a weakness of innovative capacity of the country, reducing the country’s global competitiveness, technological diversity of the Russian economy caused by restrictions on the volume of investments in the industry of the new technological order, which prevents its dynamic development in the Russian economy. In this regard, the primary strategy for overcoming the technological gap of the Russian economy should be the restructuring of investments in breakthrough technologies of the sixth technological order.

Dielectronic Recombination in the Average-Atom Model

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon
Keyword(s):  
Detailed Balance ◽  
Systematic Errors ◽  
Dielectronic Recombination ◽  
Rate Equations ◽  
Strong Correlations ◽  
Dense Plasmas ◽  
Atom Model ◽  
New Feature ◽  
Average Atom Model ◽  
Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

On the interpretation of dislocation-loop growth during in-situ high-voltage Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 532-533
Author(s):  
E. Holzäpfel ◽  
F. Phillipp ◽  
M. Wilkens
Keyword(s):  
Point Defect ◽  
Rate Equations ◽  
Rate Theory ◽  
Dislocation Loops ◽  
High Voltage Electron Microscopy ◽  
Vacancy Migration ◽  
Voltage Electron ◽  
Reaction Rate Theory ◽  
Defect Reactions

During in-situ radiation damage experiments aiming on the investigation of vacancy-migration properties interstitial-type dislocation loops are used as probes monitoring the development of the point defect concentrations. The temperature dependence of the loop-growth rate v is analyzed in terms of reaction-rate theory yielding information on the vacancy migration enthalpy. The relation between v and the point-defect production rate P provides a critical test of such a treatment since it is sensitive to the defect reactions which are dominant. If mutual recombination of vacancies and interstitials is the dominant reaction, vαP0.5 holds. If, however, annihilation of the defects at unsaturable sinks determines the concentrations, a linear relationship vαP is expected.Detailed studies in pure bcc-metals yielded vαPx with 0.7≾×≾1.0 showing that besides recombination of vacancies and interstitials annihilation at sinks plays an important role in the concentration development which has properly to be incorporated into the rate equations.

Global Economic Crisis of 2008-2009: Sources and Roots

2009 ◽  
pp. 18-31
Author(s):  
G. Rapoport ◽  
A. Guerts
Keyword(s):  
Oil And Gas ◽  
Trade Deficit ◽  
Developed Countries ◽  
The Other ◽  
Energy Resources ◽  
Market Mechanisms ◽  
Production Output ◽  
The One ◽  
To Receive ◽  
Partial Destruction

In the article the global crisis of 2008-2009 is considered as superposition of a few regional crises that occurred simultaneously but for different reasons. However, they have something in common: developed countries tend to maintain a strong level of social security without increasing the real production output. On the one hand, this policy has resulted in trade deficit and partial destruction of market mechanisms. On the other hand, it has clashed with the desire of several oil and gas exporting countries to receive an exclusive price for their energy resources.

Improving XGBoost with Imagination Sampling

2020 ◽  
Vol 2 (1) ◽  
pp. 3-6
Author(s):  
Eric Holloway
Keyword(s):  
Machine Learning ◽  
General System ◽  
Learning Models ◽  
Starting Point ◽  
Machine Learning Models

Imagination Sampling is the usage of a person as an oracle for generating or improving machine learning models. Previous work demonstrated a general system for using Imagination Sampling for obtaining multibox models. Here, the possibility of importing such models as the starting point for further automatic enhancement is explored.

Analysis and Simulation Methods of the Mechanisms for the Innovational Development

2019 ◽  
pp. 16-33
Author(s):  
Marta K. Isaeva
Keyword(s):  
Production Systems ◽  
Technological Development ◽  
Computer Experiment ◽  
Simulation Models ◽  
Construction Simulation ◽  
Technological Structure ◽  
Research Sector ◽  
Practical Trial ◽  
Construction Model ◽  
Computation Analysis

The paper dedicates in commemoration of K.A. Bagrinovsky, known scientist, doctor of economic sciences, professor. His thesis was theoretic problems of mathematical modeling and operation of economy. His works in the operations research, the methods making decision, the simulation were received in scientific world. The analysis and the modeling of the mechanisms for scientific and technological development for the production systems of different level in economic hierarchic both centrally controlled economy and making mechanism were conduced by Bagrinovsky in CEMI RAS. The paper presents the investigations (2001–2015) of the analysis and the simulation of the different mechanisms of the innovational activity. It also discusses the methods of the development the complex of the simulation models. In a sense simulation modeling is the science and the art as the selection of the salient parameters for the construction model, intake simplification, the computer experiment and the making decision based on scarcity of accuracy models rest on the heuristic power of men: the practical trial, the intelligence and the intuition. K.A. Bagrinovsky introduced the considerable endowment in the development of this direction for economic and mathematical investigation.The principal object was to show that the relationship between the innovational policy and the technological structure, scientific research sector and the introducing of the progressive production and the organizational structure is obtainable by the models. The character of these relationships may be to use in control of the parameters for the modernization economic. The construction simulation models and the experimental computation analysis were presented the investigations the different mechanisms of the innovational development ant the variants of the estimation have been accomplished on the modeling level by the computer experiment.

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

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