Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma

AbstractWe report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and germane were used as feed gases diluted by hydrogen. Hydrogen dilution characterized by R= QH2/[QSiH4+QGeH4], where QH2, QSiH4, and QGeH4 are gas flows of hydrogen, silane and germane, respectively. The flow was varied in the range of R=20 to 80. Composition of the films was characterized by SIMS profiling. We did not observed a significant change of the deposition rate Vd in GeYSi1-Y:H films in all the range of R, while for Ge:H films Vd was significantly reduced after R=50. AFM characterization of the surface morphology demonstrated that at R=50 average height <H>(R) reached maximum in both Ge:H and GeYSi1-Y:H films, while average diameter <D>(R) had a minimum in GeYSi1-Y:H films and maximum in Ge:H films. Both Ge:H and GeYSi1-Y:H films demonstrated change of E04 in the studied range of R, and a minimum clearly appeared in E at R=50-60 suggesting significant reduction in weak bonds of these films. The activation energy of conductivity Ea slightly increases with R in Ge:H films and shows no definitive trend in GeYSi1-Y:H: films. Both FTIR and SIMS data show a general trend of reducing hydrogen and oxygen content with R. These two types of films showed different behavior and correlations between surface morphology and optical and electrical properties.

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Effect of hydrogen dilution on electronic properties of a-SiHx films deposited by low-frequency plasma

Journal of Materials Research ◽

10.1557/jmr.2003.0268 ◽

2003 ◽

Vol 18 (8) ◽

pp. 1918-1925 ◽

Cited By ~ 5

Author(s):

A. I. Kosarev ◽

A. J. Torres ◽

C. Zuniga ◽

A. S. Abramov ◽

P. Rosales ◽

...

Keyword(s):

Infrared Spectroscopy ◽

Plasma Deposition ◽

Low Frequency ◽

Optical Absorption Coefficient ◽

Optical And Electrical Properties ◽

Hydrogen Incorporation ◽

Hydrogen Dilution ◽

Temperature Dependence Of Conductivity ◽

Frequency Plasma ◽

Order Of Magnitude

The effect of hydrogen dilution during plasma deposition on hydrogen incorporation and the optical and electrical properties of a-SiHx films were studied. The films were grown in capacitive low-frequency (f = 10 and 110 kHz) discharge in SiH4 diluted with H2, varying the ratio RH of the gases H2/SiH4 from RH = 0 to 40. The optical absorption coefficient and optical bandgap were changed with RH. Si–H bonding, studied by infrared spectroscopy, depended on RH. Hydrogen concentration in the films estimated from infrared spectra was in the range 20–30%. We observed the significant effect of RH on the temperature dependence of conductivity σ(T) and on the subgap absorption spectra measured by the constant photocurrent method. The reduction of subgap absorption up to 1.5 order of magnitude was observed with increasing RH.

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Isolasi Dan Karakterisasi Bentonit Alam Menjadi Nanopartikel Monmorillonit

Jurnal Katalisator ◽

10.22216/jk.v3i1.2729 ◽

2018 ◽

Vol 3 (1) ◽

pp. 12 ◽

Cited By ~ 1

Author(s):

Zaimahwati Zaimahwati ◽

Yuniati Yuniati ◽

Ramzi Jalal ◽

Syahman Zhafiri ◽

Yuli Yetri

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Particle Size ◽

Surface Morphology ◽

Average Diameter ◽

Particle Size Analyzer ◽

Ft Ir ◽

Scanning Electron ◽

Sedimentation Processes

Pada penelitian ini telah dilakukan isolasi dan karakterisasi bentonit alam menjadi nanopartikel montmorillonit. Bentonit alam yang digunakan diambil dari desa Blangdalam, Kecamatan Nisam Kabupaten Aceh Utara. Proses isolasi meliputi proses pelarutan dengan aquades, ultrasonic dan proses sedimentasi. Untuk mengetahui karakterisasi montmorillonit dilakukan uji FT-IR, X-RD dan uji morfologi permukaan dengan Scanning Electron Microscopy (SEM). Partikel size analyzer untuk menganalisis dan menentukan ukuran nanopartikel dari isolasi bentonit alam. Dari hasil penelitian didapat ukuran nanopartikel montmorillonit hasil isolasi dari bentonit alam diperoleh berdiameter rata-rata 82,15 nm.In this research we have isolated and characterized natural bentonite into montmorillonite nanoparticles. Natural bentonite used was taken from Blangdalam village, Nisam sub-district, North Aceh district. The isolation process includes dissolving process with aquades, ultrasonic and sedimentation processes. The characterization of montmorillonite, FT-IR, X-RD and surface morphology test by Scanning Electron Microscopy (SEM). Particle size analyzer to analyze and determine the size of nanoparticles from natural bentonite insulation. From the research results obtained the size of montmorillonite nanoparticles isolated from natural bentonite obtained an average diameter of 82.15 nm.

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Improving structural, optical, and electrical properties of μc-Si:H using non-uniform hydrogen dilution treatment on RF-PECVD prepared layers

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105790 ◽

2021 ◽

Vol 129 ◽

pp. 105790

Author(s):

Zahra Dorostghol ◽

Abdolnabi Kosarian

Keyword(s):

Electrical Properties ◽

Optical And Electrical Properties ◽

Hydrogen Dilution

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Optical and Electrical Properties of Ar and H$_2$ Plasmas Generated by Using a Low-frequency (60 Hz) Power Source

New Physics Sae Mulli ◽

10.3938/npsm.65.71 ◽

2015 ◽

Vol 65 (1) ◽

pp. 71-75

Author(s):

Jong-Goo BHAK* ◽

Gwang Hyun KIM ◽

Yeong Un KIM ◽

Seung Hwan AN ◽

Yong Jin LEE ◽

...

Keyword(s):

Electrical Properties ◽

Low Frequency ◽

Power Source ◽

Optical And Electrical Properties

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Low frequency plasma deposition and characterization of Si1−xGex:H,F films

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2004.02.028 ◽

2004 ◽

Vol 338-340 ◽

pp. 91-96 ◽

Cited By ~ 17

Author(s):

R. Ambrosio ◽

A. Torres ◽

A. Kosarev ◽

A. Ilinski ◽

C. Zúñiga ◽

...

Keyword(s):

Plasma Deposition ◽

Low Frequency ◽

Frequency Plasma

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Effects of composition on optical and electrical properties of amorphous In–Ga–Zn–O films deposited using radio-frequency sputtering with varying O2 gas flows

Thin Solid Films ◽

10.1016/j.tsf.2012.07.106 ◽

2012 ◽

Vol 520 (23) ◽

pp. 6942-6946 ◽

Cited By ~ 19

Author(s):

Yih-Shing Lee ◽

Wei-Jhe Chen ◽

Jyun-Sheng Huang ◽

Shich-Chuan Wu

Keyword(s):

Electrical Properties ◽

Radio Frequency ◽

Gas Flows ◽

Optical And Electrical Properties ◽

Radio Frequency Sputtering

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Optical and Electrical Properties of Cd Te Laser-Synthetized

MRS Proceedings ◽

10.1557/proc-13-665 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 3

Author(s):

L. Baufay ◽

A. Pigeolet ◽

R. Andrew ◽

L.D. Laude

Keyword(s):

Electrical Properties ◽

Single Crystal ◽

Electrical Characterization ◽

Point Of View ◽

Optical And Electrical Properties ◽

Impurity States ◽

Absorption Measurements ◽

Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

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