Low Temperature Poly-Si Sputtering Deposition Through Metal-induced Crystallization and its Application

2006 ◽  
Vol 910 ◽  
Author(s):  
Hsiu-Wu Guo ◽  
Chen-Luen Shih ◽  
Joe Ketterl ◽  
Scott Dunham
Keyword(s):  
Solid Phase ◽  
Columnar Structure ◽  
Significant Loss ◽  
Nickel Silicide ◽  
Grain Structure ◽  
Cross Sectional ◽  
Sputtering Deposition ◽  
Metal Induced Crystallization ◽  
Transmission Electron ◽  
Induced Crystallization

AbstractGrowth of Si thin films via metal-induced crystallization (MIC) has been demonstrated by several research groups. This process lowers the crystallization temperature compared to standard solid phase crystallization (SPC). Ni is the metal that is most often adopted for this purpose. In this work, a 20-50nm Ni layer was deposited by DC magnetron sputtering onto a 500nm SiO2 layer grown on silicon wafers, followed by Si deposition at 500°C without breaking vacuum. X-ray diffraction (XRD) results and cross-sectional transmission electron microscopy (XTEM) confirmed the formation of poly-Si in a columnar structure with grain sizes in the 100-300nm range. XTEM and XPS show that nickel silicide was formed at the Si-Ni interface. We find that doping type and concentration do not have a significant impact on the grain structure. SIMS reveals no significant loss or redistribution in doping concentration during sputtering.

Characterization of pulsed laser deposited MoS2 by transmission electron microscopy

1993 ◽  
Vol 8 (11) ◽  
pp. 2933-2941 ◽  
Author(s):  
S.D. Walek ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Aerospace Applications ◽  
Transmission Electron ◽  
Novel Method

Molybdenum disulfide is a technologically important solid phase lubricant for vacuum and aerospace applications. Pulsed laser deposition of MoS2 is a novel method for producing fully dense, stoichiometric thin films and is a promising technique for controlling the crystallographic orientation of the films. Transmission electron microscopy (TEM) of self-supporting thin films and cross-sectional TEM samples was used to study the crystallography and microstructure of pulsed laser deposited films of MoS2. Films deposited at room temperature were found to be amorphous. Films deposited at 300 °C were nanocrystalline and had the basal planes oriented predominately parallel to the substrate within the first 12–15 nm of the substrate with an abrupt upturn into a perpendicular (edge) orientation farther from the substrate. Spherically shaped particles incorporated in the films from the PLD process were found to be single crystalline, randomly oriented, and less than about 0.1 μm in diameter. A few of these particles, observed in cross section, had flattened bottoms, indicating that they were molten when they arrived at the surface of the growing film. Analytical electron microscopy (AEM) was used to study the chemistry of the films. The x-ray microanalysis results showed that the films have the stoichiometry of cleaved single crystal MoS2 standards.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

An Influence of the Si(111)3-4o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi2 Nanorods and their Crystal Parameters

2019 ◽  
Vol 806 ◽  
pp. 30-35
Author(s):  
Nikolay Gennadievich Galkin ◽  
Konstantin N. Galkin ◽  
Sergei Andreevich Dotsenko ◽  
Dmitrii L'vovich Goroshko ◽  
Evgeniy Anatolievich Chusovitin ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Solid Phase ◽  
Iron Silicide ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Spe Method ◽  
First Time

The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the substrate area) on Si (111) surface with 3-4o miscut angles were established. The aspect ratio of the nanorods is 1.9 – 3.3. Cross-sectional images of a high-resolution transmission electron microscopy (HRTEM) have shown that the nanorods have α-FeSi2 crystal structure. They are strained along the “a” axis and stretched along the “c” axis, which increased the unit cell volume by 10.3%. According to HRTEM image analysis, the nanorods have the following epitaxial relationships: α-FeSi2[01]//Si [10] and α-FeSi2(112)//Si (111). All the data obtained have provided, for the first time, a direct evidence of α-FeSi2 nanorods formation on Si (111) vicinal surface without noticeable penetration of Fe atoms into the Si substrate.

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

1989 ◽  
Vol 148 ◽  
Author(s):  
E.D. Marshall ◽  
S.S. Lau ◽  
C.J. Palmstrøm ◽  
T. Sands ◽  
C.L. Schwartz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ohmic Contact Formation ◽  
Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

Cross Sectional Transmission Electron Microscopy Study of Obliquely Evaporated Silicon Oxide thin Films

1985 ◽  
Vol 61 ◽  
Author(s):  
A. Barna ◽  
O. Geszti ◽  
L. Gosztola ◽  
E. Seyfried
Keyword(s):  
Cross Sections ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Microscopy Study ◽  
Columnar Structure ◽  
Electron Microscopy Study ◽  
High Rate ◽  
Cross Sectional ◽  
Clear Cut ◽  
Transmission Electron

ABSTRACTThe columnar structure in obliquely evaporated silicon oxide layers was investigated by transmission electron microscope (TEM). For TEM studies of these layers, samples were made by low angle ion-beam thinning of cross-sections, the planes of which were determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5° to 30° (measured from the plane of the substrate), a change from a well–defined columnar structure to a striated structure was observed, for layers evaporated both under “low-rate” and “high-rate” conditions. There is a clear-cut dependence of the orientation of columns (αc) upon the angle of evaporation (α), however deviating from the “tangent rule” (tanαc=2tanα).

Metal-catalyzed graphitization in Ni-C alloys and amorphous-C/Ni bilayers

2011 ◽  
Vol 1284 ◽  
Author(s):  
Katherine L. Saenger ◽  
Christian Lavoie ◽  
Roy Carruthers ◽  
Ageeth A. Bol ◽  
Timothy J. Mcardle ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Graphitic Carbon ◽  
Metal Induced Crystallization ◽  
Annealing Conditions ◽  
Metal Catalyzed ◽  
Few Layer Graphene ◽  
Induced Crystallization

ABSTRACTMetal-catalyzed graphitization from vapor phase sources of carbon is now an established technique for producing few-layer graphene, a candidate material of interest for post-silicon electronics. Here we describe two alternative metal-catalyzed graphene formation processes utilizing solid phase sources of carbon. In the first, carbon is introduced as part of a cosputtered Ni-C alloy; in the second, carbon is introduced as one of the layers in an amorphous carbon (a-C)/Ni bilayer stack. We examine the quality and characteristics of the resulting graphene as a function of starting film thicknesses, Ni-C alloy composition or a-C deposition method (physical or chemical vapor deposition), and annealing conditions. We then discuss some of the competing processes playing a role in graphitic carbon formation and review recent evidence showing that the graphitic carbon in the a-C/Ni system initially forms by a metal-induced crystallization mechanism (analogous to what is seen with Al-induced crystallization of amorphous Si) rather than by the dissolution-upon-heating/precipitation-upon-cooling mechanism seen when graphene is grown by metal-catalyzed chemical vapor deposition methods.

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